
Allicdata Part #: | IRFIZ34G-ND |
Manufacturer Part#: |
IRFIZ34G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 60V 20A TO220FP |
More Detail: | N-Channel 60V 20A (Tc) 42W (Tc) Through Hole TO-22... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 42W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRFIZ34G is a single-FET type semiconductor device designed and produced by International Rectifier. This device is designed to serve a wide range of purposes in the industrial and consumer electronics markets. It is a highly efficient and reliable device that is used in a variety of applications.
The IRFIZ34G is an insulated-gate field-effect transistor (IGFET). This type of device is also known as an insulated metal–oxide semiconductor (MOSFET) or metal–oxide–semiconductor field-effect transistor (MOSFET). The IGFET has an insulated gate that facilitates current control and eliminates the need for an additional layer. The gate voltage is applied to the insulated gate which causes a voltage to be generated on the body of the device.
The IRFIZ34G utilizes a unique design that allows it to be used in many applications. It has a low threshold voltage so that it can be used in applications such as power electronics and AC/DC converters. The device also has a low on-state resistance so that it can be used as a load switch or as an amplifier in high-frequency applications. The device also features a low gate charge for fast switching, as well as a low thermistor to reduce potential thermal runaway problems.
The IRFIZ34G has a wide range of uses in both industrial and consumer electronics applications. It is used in motor control systems in automotive and heavy machinery applications. It is also used in renewable energy systems such as the inverter that is used to convert AC to DC. In addition, the device can be used in switching power supplies and other applications that require high-switching speeds and low power consumption.
The working principle of the IRFIZ34G is based on the induced current. When the gate voltage is applied to the device, it creates an electric field effect between the gate and the body of the device. This induces a current in the device, which can then be used to control the operation of the device. As the gate voltage is varied, the current through the device changes accordingly, which allows it to be used for a wide range of purposes.
The IRFIZ34G is a highly efficient and reliable device that is suitable for a wide range of applications. It is a low-cost device that can be used in a variety of applications. It is also a high-performance, reliable device that is capable of providing excellent performance in a variety of applications. The IRFIZ34G is an excellent choice for applications in both industrial and consumer electronics.
The specific data is subject to PDF, and the above content is for reference
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