IRFL014NTRPBF Discrete Semiconductor Products |
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Allicdata Part #: | IRFL014NPBFTR-ND |
Manufacturer Part#: |
IRFL014NTRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 1.9A SOT223 |
More Detail: | N-Channel 55V 1.9A (Ta) 1W (Ta) Surface Mount SOT-... |
DataSheet: | IRFL014NTRPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 190pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 1.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.9A (Ta) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IRFL014NTRPBF is a high power, N-channel MOSFET that is designed for applications such as high speed switching, rf amplification and power control. It is intended for use in a wide range of applications, ranging from high voltage and high current to low voltage and low current.
The IRFL014NTRPBF is a third-generation field-effect transistor (FET), which is a type of transistor that relies on transverse electric fields to control current flows. This type of transistor is known for its low power dissipation, high switching speed, and high on/off ratio.
The IRFL014NTRPBF is an enhancement-mode MOSFET, which means that when voltage is applied to the gate, the device conducts; when the gate voltage is removed, the device does not conduct. This makes the device ideal for applications where the flow of current is switched on and off, as in high speed switching.
The IRFL014NTRPBF has a wide range of applications in power control, rf amplification and high speed switching. It can be used to switch high currents and voltages in power supplies, motor drives, and automotive applications. It can also be used for rf amplifiers for transmitting and receiving signals, as well as for controlling level shifters, inverters and other power control circuits.
The IRFL014NTRPBF is a robust device with low on-state resistance and high dv/dt capability. It has a maximum performance rating of 1.2A continuous current and continuous drain-source voltage of 800V. It also features a low input capacitance, high transconductance and is available in a wide range of configurations.
The working principle behind the IRFL014NTRPBF is that it is an enhancement-mode MOSFET, meaning that when a positive voltage is applied to the gate, it conducts electrons from the source to the drain. This allows the device to be used in applications that require the on/off switching of currents. The device is capable of high speeds and is designed to operate reliably over a wide temperature range.
The IRFL014NTRPBF is an ideal choice for controlling high powers, high current, and high voltage. Due to its wide range of applications, it can be used in a variety of applications, ranging from automotive and industrial to consumer electronics. Its low operating power and high on/off ratio make it a preferred solution for many applications.
The specific data is subject to PDF, and the above content is for reference
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