| Allicdata Part #: | IRFL9110TR-ND |
| Manufacturer Part#: |
IRFL9110TR |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 100V 1.1A SOT223 |
| More Detail: | P-Channel 100V 1.1A (Tc) 2W (Ta), 3.1W (Tc) Surfac... |
| DataSheet: |  IRFL9110TR Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-261-4, TO-261AA |
| Supplier Device Package: | SOT-223 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2W (Ta), 3.1W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 200pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 8.7nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 660mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 1.1A (Tc) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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.The IRFL9110TR is an advanced MOSFET device which is known for its extensive range of applications and high performance. This MOSFET device comes with a variety of features that makes it an ideal choice for applications ranging from robotics and industrial automation to communication systems. This device also offers robust performance, low on-resistance, and excellent linearity.
The IRFL9110TR is a N-Channel MOSFET device featuring a wide input voltage range and is suitable for various applications. This device employs the trench MOSFET technology which provides excellent performance at high temperatures and low on-resistance.
The IRFL9110TR device is primarily used in applications where high efficiency and precise control are required. This device is also suitable for use in robotics and industrial automation as it has a low on-resistance and excellent linearity.
The working principle of the IRFL9110TR is simple and straightforward. The device is made up of two main components; an N-Channel MOSFET and a drain electrode. When a voltage is applied to the N-Channel and the source electrode, a current starts to flow between the source and the drain. This current is then controlled by the voltage applied.
The IRFL9110TR is able to achieve excellent linearity due to the low on-resistance resulting from the trench MOSFET technology. This low on-resistance reduces the power loss and provides efficient operation. The device also features high temperature operation and is capable of operating at temperatures up to 150°C.
The IRFL9110TR is an ideal choice for applications such as robotics, industrial automation, communication systems, and power circuits. This device is capable of providing high efficiency and precise control and is able to operate at high temperatures. Its low on-resistance enables the device to achieve excellent linearity, resulting in less power loss and improved performance.
The specific data is subject to PDF, and the above content is for reference
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| IRFL9014PBF | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 60V 1.8A SOT2... |
| IRFL9110PBF | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 1.1A SOT... |
| IRFL024NTR | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 2.8A SOT2... |
| IRFL1006TR | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 1.6A SOT2... |
| IRFL214TR | Vishay Silic... | -- | 1000 | MOSFET N-CH 250V 790MA SO... |
| IRFL4315 | Infineon Tec... | -- | 1000 | MOSFET N-CH 150V 2.6A SOT... |
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| IRFL1006PBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 60V 1.6A SOT2... |
| IRFL024ZPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 5.1A SOT2... |
| IRFL024NPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 55V 2.8A SOT2... |
| IRFL4105PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 55V 3.7A SOT2... |
| IRFL4315TRPBF | Infineon Tec... | -- | 1000 | MOSFET N-CH 150V 2.6A SOT... |
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| IRFL014TRPBF | Vishay Silic... | -- | 1000 | MOSFET N-CH 60V 2.7A SOT2... |
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