Allicdata Part #: | IRFL014NPBF-ND |
Manufacturer Part#: |
IRFL014NPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 1.9A SOT223 |
More Detail: | N-Channel 55V 1.9A (Ta) 1W (Ta) Surface Mount SOT-... |
DataSheet: | IRFL014NPBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 190pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 1.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.9A (Ta) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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The IRFL014NPBF is a deep-level vertical N channel enhancement-mode MOSFET which is commonly used in a range of applications, including controlling motor speed and as a load switch. The IRFL014NPBF has a variety of characteristics which make it suitable for use in a range of applications.
One of the most important characteristics of the IRFL014NPBF is its maximum drain current. This is the maximum amount of current the device can handle before it begins to misbehave, or even cause damage. Maximum drain current is usually measured in amperes, and the IRFL014NPBF is rated for up to 22A. This makes the device ideal for high-power applications, as well as for applications that require regulated current, such as motor speed control.
Furthermore, the IRFL014NPBF has a maximum drain-source voltage rating of 40V. This is the voltage that it can tolerate across its drain and source terminals. It is rated as such as to prevent damage in the event of a short circuit or other incident. It is important to check the datasheet of the IRFL014NPBF to make sure that the voltage rating is sufficient for the application in question.
The other important characteristic of the IRFL014NPBF is its on-resistance. This is the amount of resistance between the drain and source terminals when the switch is on. It is an important factor when considering the efficiency of any switching application, as it affects the amount of heat generated by the device. The IRFL014NPBF has an on-resistance rating of 0.010 Ohms, which is low enough to ensure efficient operation, as well as minimizing heat generation.
The IRFL014NPBF is also notable for its maximum thermal resistance. This is a measure of how efficiently the device is able to dissipate heat. It is a measure of the ratio of the device\'s maximum dissipation power to its temperature rise. The IRFL014NPBF has a maximum thermal resistance rating of 2.5C per watt, making it excellent at dissipating heat and helping to keep the device cool.
In terms of its working principle, the IRFL014NPBF is an N-channel MOSFET, which means that its gate controls the flow of the drain current. When the gate is kept at the same voltage as the source, the drain current is blocked. However, when the gate voltage is increased, the drain current flows through the channel, allowing it to be used as a switch. This switching action is reversible and can be used in various applications.
Overall, the IRFL014NPBF is a highly efficient and reliable MOSFET which can be used in a range of applications. It has a high maximum drain current rating and a low on-resistance, which make it suitable for high-power applications. Furthermore, its maximum thermal resistance rating makes it excellent at dissipating heat. Finally, its working principle makes it a versatile and reliable device that can be used in a range of switching applications.
The specific data is subject to PDF, and the above content is for reference
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