IRFL9110PBF Allicdata Electronics
Allicdata Part #:

IRFL9110PBF-ND

Manufacturer Part#:

IRFL9110PBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 100V 1.1A SOT223
More Detail: P-Channel 100V 1.1A (Tc) 2W (Ta), 3.1W (Tc) Surfac...
DataSheet: IRFL9110PBF datasheetIRFL9110PBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.7nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 660mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The Infineon IRFL9110PBF is an excellent choice for use in a variety of applications, due to its versatile features and excellent performance characteristics. This is an N-channel enhancement-mode type power MOSFET. Capable of operating in a wide-range of power applications, the IRFL9110PBF exhibits high efficiency and low on-state resistance. This make it suitable for a variety of power supplies and applications which demand high-level power efficiency and reliable operation.

The IRFL9110PBF is designed to be used in both low-side and high-side configurations, and is suitable for use in both H-bridge and half-bridge configurations. Due to its low on-state resistance and maximum drain-source voltage of 20V, it is also well-suited for driving high-load current switched applications, such as an electric motor or appliance. It is optimized for very low gate charge and has a very low total gate charge. This makes it ideal for use in applications that require fast switching response.

The IRFL9110PBF is constructed in an efficient 4-pin TO-220 package, which is designed to be optimized for heat dissipation. This makes it ideal for use in applications which require high current switching and dissipate large amounts of heat. The IRFL9110PBF is built with a high-performance silicon die, which improves its tolerance to thermal shock and vibration.

The IRFL9110PBF is an ideal choice for high-efficiency power applications and works reliably under severe thermal and working conditions. Its superior design provides superior reliability and superior performance in high-current applications. The IRFL9110PBF is an excellent choice for a variety of power applications, and its versatile features makes it a great choice for many types of applications.

The IRFL9110PBF operates on the principle of Field-Effect Transistors (FETs). FETs are based on the field-effect principle, which operates by controlling the electric potential of a gate relative to the drain and source terminals of the transistor. The electric potential of the gate affects the flow of current between the drain and the source terminals. FETs are widely used in power switching applications and they are preferred over bipolar transistors because of their superior high-current handling and fast switching speed.

When the gate voltage is applied, a channel is formed between the drain and source terminals, allowing current to flow. The gate voltage is increased or decreased, to control the current flow between the drain and the source. The gate voltage also determines how strongly the drain-source current is controlled. The gate charge of a FET is also proportional to the gate-to-source voltage, and is used to control the drain-source current. High drain-source saturation and high-short circuit current can be achieved with a low gate charge.

The IRFL9110PBF is an excellent choice for high current applications, due to its low on-state resistance and high breakdown voltage. It is also well suited for applications which require fast switching speed and high-efficiency operation. Furthermore, due to its 4-pin TO-220 package design, it also provides superior thermal performance and is suitable for high-power applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "IRFL" Included word is 40
Part Number Manufacturer Price Quantity Description
IRFL4105TR Infineon Tec... -- 1000 MOSFET N-CH 55V 3.7A SOT2...
IRFL4310TR Infineon Tec... -- 1000 MOSFET N-CH 100V 1.6A SOT...
IRFL014 Vishay Silic... -- 1000 MOSFET N-CH 60V 2.7A SOT2...
IRFL014TR Vishay Silic... -- 1000 MOSFET N-CH 60V 2.7A SOT2...
IRFL110 Vishay Silic... -- 1000 MOSFET N-CH 100V 1.5A SOT...
IRFL110TR Vishay Silic... -- 1000 MOSFET N-CH 100V 1.5A SOT...
IRFL210 Vishay Silic... -- 1000 MOSFET N-CH 200V 0.96A SO...
IRFL210TR Vishay Silic... -- 1000 MOSFET N-CH 200V 0.96A SO...
IRFL214 Vishay Silic... -- 1000 MOSFET N-CH 250V 790MA SO...
IRFL9014 Vishay Silic... -- 1000 MOSFET P-CH 60V 1.8A SOT2...
IRFL9014TR Vishay Silic... -- 1000 MOSFET P-CH 60V 1.8A SOT2...
IRFL9110 Vishay Silic... -- 1000 MOSFET P-CH 100V 1.1A SOT...
IRFL9110TR Vishay Silic... -- 1000 MOSFET P-CH 100V 1.1A SOT...
IRFL4105 Infineon Tec... -- 1000 MOSFET N-CH 55V 3.7A SOT2...
IRFL024N Infineon Tec... -- 1000 MOSFET N-CH 55V 2.8A SOT2...
IRFL1006 Infineon Tec... 0.0 $ 1000 MOSFET N-CH 60V 1.6A SOT2...
IRFL014NPBF Infineon Tec... 0.0 $ 1000 MOSFET N-CH 55V 1.9A SOT2...
IRFL014PBF Vishay Silic... -- 1000 MOSFET N-CH 60V 2.7A SOT2...
IRFL110PBF Vishay Silic... 0.0 $ 1000 MOSFET N-CH 100V 1.5A SOT...
IRFL214PBF Vishay Silic... 0.0 $ 1000 MOSFET N-CH 250V 790MA SO...
IRFL9014PBF Vishay Silic... 0.0 $ 1000 MOSFET P-CH 60V 1.8A SOT2...
IRFL9110PBF Vishay Silic... -- 1000 MOSFET P-CH 100V 1.1A SOT...
IRFL024NTR Infineon Tec... 0.0 $ 1000 MOSFET N-CH 55V 2.8A SOT2...
IRFL1006TR Infineon Tec... 0.0 $ 1000 MOSFET N-CH 60V 1.6A SOT2...
IRFL214TR Vishay Silic... -- 1000 MOSFET N-CH 250V 790MA SO...
IRFL4315 Infineon Tec... -- 1000 MOSFET N-CH 150V 2.6A SOT...
IRFL024Z Infineon Tec... 0.0 $ 1000 MOSFET N-CH 55V 5.1A SOT2...
IRFL1006PBF Infineon Tec... -- 1000 MOSFET N-CH 60V 1.6A SOT2...
IRFL024ZPBF Infineon Tec... -- 1000 MOSFET N-CH 55V 5.1A SOT2...
IRFL024NPBF Infineon Tec... -- 1000 MOSFET N-CH 55V 2.8A SOT2...
IRFL4105PBF Infineon Tec... 0.0 $ 1000 MOSFET N-CH 55V 3.7A SOT2...
IRFL4315TRPBF Infineon Tec... -- 1000 MOSFET N-CH 150V 2.6A SOT...
IRFL014NTRPBF Infineon Tec... -- 1000 MOSFET N-CH 55V 1.9A SOT2...
IRFL110TRPBF Vishay Silic... -- 7500 MOSFET N-CH 100V 1.5A SOT...
IRFL9014TRPBF Vishay Silic... -- 5000 MOSFET P-CH 60V 1.8A SOT2...
IRFL024NTRPBF Infineon Tec... -- 2500 MOSFET N-CH 55V 2.8A SOT2...
IRFL4310PBF Infineon Tec... -- 1533 MOSFET N-CH 100V 1.6A SOT...
IRFL4315PBF Infineon Tec... -- 1621 MOSFET N-CH 150V 2.6A SOT...
IRFL4105TRPBF Infineon Tec... -- 1000 MOSFET N-CH 55V 3.7A SOT2...
IRFL014TRPBF Vishay Silic... -- 1000 MOSFET N-CH 60V 2.7A SOT2...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics