Allicdata Part #: | IRFL9110PBF-ND |
Manufacturer Part#: |
IRFL9110PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 100V 1.1A SOT223 |
More Detail: | P-Channel 100V 1.1A (Tc) 2W (Ta), 3.1W (Tc) Surfac... |
DataSheet: | IRFL9110PBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta), 3.1W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 200pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 8.7nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 660mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.1A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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。The Infineon IRFL9110PBF is an excellent choice for use in a variety of applications, due to its versatile features and excellent performance characteristics. This is an N-channel enhancement-mode type power MOSFET. Capable of operating in a wide-range of power applications, the IRFL9110PBF exhibits high efficiency and low on-state resistance. This make it suitable for a variety of power supplies and applications which demand high-level power efficiency and reliable operation.
The IRFL9110PBF is designed to be used in both low-side and high-side configurations, and is suitable for use in both H-bridge and half-bridge configurations. Due to its low on-state resistance and maximum drain-source voltage of 20V, it is also well-suited for driving high-load current switched applications, such as an electric motor or appliance. It is optimized for very low gate charge and has a very low total gate charge. This makes it ideal for use in applications that require fast switching response.
The IRFL9110PBF is constructed in an efficient 4-pin TO-220 package, which is designed to be optimized for heat dissipation. This makes it ideal for use in applications which require high current switching and dissipate large amounts of heat. The IRFL9110PBF is built with a high-performance silicon die, which improves its tolerance to thermal shock and vibration.
The IRFL9110PBF is an ideal choice for high-efficiency power applications and works reliably under severe thermal and working conditions. Its superior design provides superior reliability and superior performance in high-current applications. The IRFL9110PBF is an excellent choice for a variety of power applications, and its versatile features makes it a great choice for many types of applications.
The IRFL9110PBF operates on the principle of Field-Effect Transistors (FETs). FETs are based on the field-effect principle, which operates by controlling the electric potential of a gate relative to the drain and source terminals of the transistor. The electric potential of the gate affects the flow of current between the drain and the source terminals. FETs are widely used in power switching applications and they are preferred over bipolar transistors because of their superior high-current handling and fast switching speed.
When the gate voltage is applied, a channel is formed between the drain and source terminals, allowing current to flow. The gate voltage is increased or decreased, to control the current flow between the drain and the source. The gate voltage also determines how strongly the drain-source current is controlled. The gate charge of a FET is also proportional to the gate-to-source voltage, and is used to control the drain-source current. High drain-source saturation and high-short circuit current can be achieved with a low gate charge.
The IRFL9110PBF is an excellent choice for high current applications, due to its low on-state resistance and high breakdown voltage. It is also well suited for applications which require fast switching speed and high-efficiency operation. Furthermore, due to its 4-pin TO-220 package design, it also provides superior thermal performance and is suitable for high-power applications.
The specific data is subject to PDF, and the above content is for reference
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