Allicdata Part #: | IRFL9014-ND |
Manufacturer Part#: |
IRFL9014 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 60V 1.8A SOT223 |
More Detail: | P-Channel 60V 1.8A (Tc) 2W (Ta), 3.1W (Tc) Surface... |
DataSheet: | IRFL9014 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta), 3.1W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 270pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 500 mOhm @ 1.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.8A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRFL9014 is an enhancement-mode vertical power Field Effect Transistor (FET) designed for use in power switching applications such as general-purpose power switching, lighting and solenoid control, motor control, etc. It is housed in a plastic package and developed primarily for low and medium power applications.
The IRFL9014 is a vertical, insulated gate field effect power transistor manufactured using an advanced High Voltage MOS (HV MOS) process. It has a breakdown voltage of 90V and a maximum DC drain current of 3A. It features low gate charge and low rDS(on).
The IRFL9014 can be used for both linear and switching operations. Its design and high voltage process make it ideal for high frequency, high speed switching applications such as Motor Control and Power Conversion. In addition, its low rDS(on) makes it suitable for automotive applications.
The IRFL9014 is an N-channel enhancement-mode vertical power Field Effect Transistor (FET). It has a drain-source breakdown voltage (BVDSS) of 90V and a maximum DC drain current (IDMAX) of 3A. The drain-source on-state resistance (rDS(on)) is very low, typically lower than 0.45Ω
The IRFL9014 is usually used in power switching applications, as it offers excellent switching characteristics, low on-resistance and high current density. The transistors are capable of switching frequencies up to 5MHz and peak drain current to 3A. The IRFL9014 is also ideal for high efficiency designs. It has a low gate threshold voltage (VGS(-Vth)) of 2V to 4V, which allows for easy driving of the gate using low power logic levels.
The working principle of IRFL9014 is based on the field effect established by an electric field between the drain and source. The gate voltage controls the electric field, determining the current that flows between the drain and source when a bias voltage is applied. The electric field is responsible for the transistor’s excellent switching characteristics, allowing for high speed operation and relatively low on resistance.
In the on state, when the gate voltage is positive, the electric field is established between the drain and the source and the transistor operates in saturation. On the other hand, when the gate voltage is negative, the transistor operates in cut-off state, no current flows between the drain and source.
In addition, the IRFL9014 also has a high input impedance and low output impedance, which makes it suitable for high efficiency designs and high power switching applications. The transistor is capable of operating at high frequencies up to 5MHz and peak drain current of up to 3A.
The IRFL9014 is a versatile transistor that can be used in a variety of applications, from low-power switching to high-voltage, high-current switching. Its excellent switching characteristics, low on-resistance and high current density make it suitable for everything from general power switching to motor control and power conversion.
The specific data is subject to PDF, and the above content is for reference
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