Allicdata Part #: | IRFU214BTU_FP001-ND |
Manufacturer Part#: |
IRFU214BTU_FP001 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 250V 2.2A IPAK |
More Detail: | N-Channel 250V 2.2A (Tc) 2.5W (Ta), 25W (Tc) Throu... |
DataSheet: | IRFU214BTU_FP001 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 250V |
Current - Continuous Drain (Id) @ 25°C: | 2.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 1.1A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 10.5nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 275pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 25W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I-PAK |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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IRFU214BTU_FP001 is a single n-type Mosfet transistor device designed for applications such as providing on/off control for amplifier output stages, DC blocking, AC coupling, audio switching, and switching of AC or DC signals.
Mosfet transistors, also known as Metal Oxide Semiconductor field effect transistors (MOSFETs), are a type of transistor device that is used in many applications. Basically, a MOSFET is a type of transistor that allows electrical current to flow through the substrate. It is a three-terminal device with source, gate and drain terminals. When the voltage applied to the two gates is in either a positive or negative state, current will flow. However, when the voltage is low, no current will flow and the device is said to be in the off-state.
The IRFU214BTU_FP001 device is a single n-type transistor constructed with drain, source and gate connections. It is designed for use in applications up to a voltage of 175V and a maximum current of 1A. It has a low on-resistance of 1.1 Ohms and is able to switch quickly and efficiently. The device can be used in both linear and switching operations.
In linear operations, the device is used to provide low level voltage amplification or as a DC blocking device in circuits. In linear operations, the gate voltage controls the flow of current and the device is used to provide a variable current flow depending on the voltage applied to the gate. In switching operations, the device is used to provide on/off control for amplifier output stages and AC/DC signal switching.
The IRFU214BTU_FP001 device is a great choice for applications that require high switching speeds and low power consumption. It features a high switching speed of 250V/ns, low gate charge of 200nC and a low gate threshold of 3.3V. This makes the device an ideal choice for a variety of applications, from audio distribution systems to high current switching and voltage boosting.
The device also has good thermal properties, and is able to withstand high temperatures. It has a maximum power dissipation of 3.1W at 25°C and a thermal resistance of 100°C/W.
Overall, the IRFU214BTU_FP001 device is a highly versatile and efficient transistor device. It can be used in a variety of applications, from linear to switching operations, and is able to provide quick and efficient switching while consuming minimal power.
The specific data is subject to PDF, and the above content is for reference
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