Allicdata Part #: | IRFU3607-701PBF-ND |
Manufacturer Part#: |
IRFU3607-701PBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N CH 75V 56A IPAK |
More Detail: | N-Channel 75V 56A (Tc) 140W (Tc) Surface Mount I-P... |
DataSheet: | IRFU3607-701PBF Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 75V |
Current - Continuous Drain (Id) @ 25°C: | 56A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 46A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 84nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3070pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 140W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | I-PAK (LF701) |
Package / Case: | TO-252-4, DPak (3 Leads + Tab) |
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The IRFU 3607-701PBF is a power field effect transistor (Power FET) that is used in a variety of applications. This FET is an N-channel, insulated gate type, with a maximum drain current capacity of 27.5A and a peak gate voltage of 16V. It is constructed in a unique package format that provides superior power efficiency and thermal capabilities. This article will discuss the application field and working principle of the IRFU 3607-701PBF FET.
The IRFU 3607-701PBF is used in DC/DC converters and power management systems. It is designed to handle high-efficiency power conversion and is ideal for applications requiring low gate drive voltages and high load current. This Power FET is capable of delivering high power to devices such as AC power supply units, DC/DC converters, and brush less DC motors. In addition, it can be used in switching power supplies and other power devices.
The working principle of the IRFU 3607-701PBF Power FET is based on the concept of an insulated gate field effect transistor (IGFET). This device consists of two main parts: the source terminal and the drain terminal. When a voltage is applied between the source and drain terminals, a current is conducted through the channel of the device. As the voltage increases, the current through the channel also increases, reaching a peak value at the voltage at which the channel begins to pinch off. The amount of current conducted by the IRFU 3607-701PBF depends on its gate voltage, which is adjustable using an external gate resistor. By decreasing the gate voltage, the peak current can be decreased, making the device suitable for low-power applications.
In addition to its use in power devices, the IRFU 3607-701PBF FET is also used in analog and digital circuits. It can be used to switch signals such as digital data, audio or video. In audio circuits, it is often used as an amplifier and can provide both low and high frequency response. As a switch, it can be used to turn circuits on or off. It can also be used in digital logic circuits, such as multiplexers, to select signals.
The IRFU 3607-701PBF Power FET is an efficient and reliable device with a wide range of uses. Its low gate voltage and high load current capabilities make it suitable for a variety of uses in DC/DC converters, power management systems, analog and digital circuits, and other applications. Its package format provides superior power efficiency and thermal capabilities, making it ideal for use where space may be limited. With its wide range of applications and reliable performance, the IRFU 3607-701PBF is an excellent choice for power electronics engineers.
The specific data is subject to PDF, and the above content is for reference
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