Allicdata Part #: | IRFU9014-ND |
Manufacturer Part#: |
IRFU9014 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 60V 5.1A I-PAK |
More Detail: | P-Channel 60V 5.1A (Tc) 2.5W (Ta), 25W (Tc) Throug... |
DataSheet: | IRFU9014 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 5.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 500 mOhm @ 3.1A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 270pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2.5W (Ta), 25W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-251AA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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An IRFU9014 is a n-channel vertical double diffused metal-oxide-semiconductor field-effect (MOSFET) transistor commonly used in RF amplifier applications. It is commonly used to amplify signals in the radio frequency (RF) range, and is particularly effective in low noise amplifier designs. The IRFU9014 is manufactured using a special process for creating a vertical double diffused MOSFET, as opposed to conventional horizontal double diffused devices. This makes it an ideal choice for a number of applications, as it offers superior performance compared to other types of transistors.
A MOSFET is an electrical device commonly used in the field of electronics and electric circuits. It is a type of field-effect transistor (FET) that uses metal-oxide-semiconductor technology. FETs are a type of transistor used for amplifying or switching analog electrical signals. The device consists of three distinct parts; a gate, a source and a drain. Electricity is allowed to travel between the source and the drain, but the gate can be used to switch it on or off. This switching capability makes MOSFETs an ideal choice for amplification, as they can be used to amplify signals without introducing any distortion.
The IRFU9014 is an n-channel MOSFET, which means that the flow of current is reversed when the voltage applied to the gate is negative. It is used in amplifier applications because it provides superior performance compared to other types of transistors. It is commonly used in low noise amplifier designs due to its low on-resistance and high transconductance. It also has a high switching speed, which makes it ideal for high frequency applications. Additionally, the device is also capable of providing stable DC operation.
The device can also be used to provide efficient power control, as it is capable of providing fast switching, low on-resistance and high power handling. This makes it an ideal choice for devices requiring power management. One of the most common applications for the IRFU9014 is in RF amplifiers, where it is used to amplify signals in the radio frequency range. It is also commonly used in cellular base stations and satellite transceivers.
Overall, the IRFU9014 is a versatile MOSFET transistor that is capable of providing superior performance in a range of amplifier applications. It is particularly effective in low noise amplifier designs and can also be used to provide efficient power management. Additionally, its fast switching speed makes it an ideal choice for powering applications that require high frequency operation. The device is available with a variety of package sizes, depending on application requirements.
The specific data is subject to PDF, and the above content is for reference
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