Allicdata Part #: | IRFU5305-ND |
Manufacturer Part#: |
IRFU5305 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 55V 31A I-PAK |
More Detail: | P-Channel 55V 31A (Tc) 110W (Tc) Through Hole IPAK... |
DataSheet: | IRFU5305 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 31A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 65 mOhm @ 16A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 63nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1200pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 110W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | IPAK (TO-251) |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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A type of field-effect transistor (FET) used in many electronic devices, the IRF5305 is a powerful component used to control current and voltage through the use of gate-controlled channels connecting to a source and drain. It is a power MOSFET – a metal-oxide-semiconductor field-effect transistor (MOSFET) – that is especially suitable for applications such as motor control, load switching, and power supply control circuits, and is widely used in places that require high power control and high levels of efficiency, such as the computing and automotive industries.
The main body of the IRF5305 includes the source, gate, and drain, which are all connected together on one side of the component. Connected on the other side is the substrate, which is used to supply current. The gate is separated from the source and drain by an insulator. This allows the drain current to remain controlled by the gate, even though it is not physically connected to it.
The IRF5305 works on the principle of allowing current to flow though the MOSFET in a manner similar to a switch, using an applied voltage to the gate. When operating, the voltage on the gate determines how much current will flow between the drain and the source. One side of the MOSFET is connected to a voltage source, and a grounding reference is connected to the substrate. When a positive voltage is applied to the gate and the source, the channel opens, creating an unbroken path from source to drain. This allows current to flow between these two points, controlled only by the applied voltage. Conversely, when a zero voltage is applied to the gate, the channel closes and no current is allowed to flow.
In addition to being able to control current flow and voltage, the IRF5305 has several other benefits, such as improved power efficiency, scalability, and better switching times. It can be used in several applications, including motor control and load switching, as well as power supply control circuits. It is also used in computing circuits, in order to improve the frequency, temperature, and overall performance of these devices.
The IRF5305 is a powerful and efficient component, making it a popular choice for many applications. Its ability to control current and voltage, as well as its scalability and improved power efficiency make it perfect for use in a variety of industries, from automotive to computing. With its wide range of uses, this is sure to be a staple of many circuit designs for years to come.
The specific data is subject to PDF, and the above content is for reference
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