Allicdata Part #: | IRFU9020-ND |
Manufacturer Part#: |
IRFU9020 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 50V 9.9A I-PAK |
More Detail: | P-Channel 50V 9.9A (Tc) 42W (Tc) Through Hole TO-2... |
DataSheet: | IRFU9020 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | TO-251AA |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 42W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 490pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 280 mOhm @ 5.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.9A (Tc) |
Drain to Source Voltage (Vdss): | 50V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRFU9020 is a type of insulated-gate field-effect transistor (IGFET), which belongs to the family of single metal-oxide semiconductor field-effect transistors (MOSFETs). It is suitable for the use in a variety of analog and digital circuit applications that require high input impedance, high voltage, and high frequency. This type of MOSFET has a low on-state resistance (at the drain-source) of up to 10A and is popularly used in power management and other applications.
The IRFU9020 is capable of delivering high frequency performance, operating at up to tens of kHz. It can also supply up to 20A peak current. It is commonly used as an amplifier in audio systems – driven by either a regulated voltage or current. The IRFU9020 is also optimized for low-voltage range of operation, making it suitable for use in low-voltage mobile devices.
IRFU9020 working principle is based on its high-input impedance, which allows the device to be quickly turned on or off with minimal power consumption. Using a gate voltage, voltage is applied across the gate–source terminals, resulting in a current transfer from the gate to the source. This causes a depletion region to form between the gate and source, which leads to an accumulation of electrons at the gate, thus resulting in the formation of a P-N channel. As current is drawn from the source, the channel between the gate and source is reduced, allowing the device to be turned off at low gate voltages.
The IRFU9020 is typically equipped with lateral PN junctions to ensure high speed switching. Thus, when a gate voltage is applied across the gate–source terminals of the device, the depletion region formed between the gate and source creates a conductive channel, allowing current to flow between the two terminals.
The IRFU9020 also offers high-voltage operation, with a drain-source voltage between 150 and 300V. This makes it ideal for high-power applications such as motor control, lighting, and computer power supplies. Additionally, the IRFU9020 can be utilized in a wide range of applications requiring high-speed switching with minimal power consumption. Examples include pulse-width modulation (PWM) motor control and various types of audio signals.
The IRFU9020 is typically used in low- and high-impedance circuits. In low-impedance circuits, the device functions as an amplifier suitable for audio and other low-level signals. In high-impedance circuits, the device functions as a switch, capable of handling high-voltage, high-frequency, and high-amplitude signals. As such, the IRFU9020 can be used in many types of applications, such as automotive, industrial, and medical.
In conclusion, the IRFU9020 is a robust and multipurpose MOSFET that offers excellent performance in a wide variety of analog and digital applications. It offers high-impedance, high-voltage, and high-frequency switch capabilities, as well as high current capability. Additionally, it is suitable for low-voltage operation, making it suitable for use in mobile devices. The IRFU9020 is a great choice for applications requiring a high degree of power management.
The specific data is subject to PDF, and the above content is for reference
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