Allicdata Part #: | IRFU5505-ND |
Manufacturer Part#: |
IRFU5505 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 55V 18A I-PAK |
More Detail: | P-Channel 55V 18A (Tc) 57W (Tc) Through Hole IPAK ... |
DataSheet: | IRFU5505 Datasheet/PDF |
Quantity: | 1000 |
Series: | HEXFET® |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 55V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 110 mOhm @ 9.6A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 650pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 57W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | IPAK (TO-251) |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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The IRFU5505 is a voltage-controlled field effect transistor (FET), also known as a MOSFET. It is designed for use in high frequency switching applications where low conduction losses, low gate-charge and low drain-source on-state resistance (RDS(on)) are desired. It is optimized for improving the efficiency of power managements systems and enabling rapid current switching in applications such as DC-DC converters, battery charging and inverters. As a voltage-controlled device, the IRFU5505 design relies on voltages to determine the conducting or non-conducting status of its source and drain terminals. This makes it ideal for use as a switch in various power circuit designs that require low voltage or power control in high-frequency environments.
Application Field of IRFU5505:
The IRFU5505 is designed primarily for use in pulsed power applications. It can be used to control the current switching speed and gate-charge levels in high frequency DC-DC converters, motor drives, and battery chargers. It is suitable for applications such as DC-AC frequency converters, solar inverters, motor drives, and flyback DC-DC converters. It is suitable for high-frequency designs including DC/DC buck/boost converters, phase shifting/angle control, IGBT gate drivers, switching power supplies and boost/buck converters. It also is suitable for MOSFET/IGBT switching and current-mode control. Additionally, the IRFU5505 can be used in Class-D audio applications such as solid-state amplifiers.
Working Principle of IRFU5505:
The IRFU5505 is a voltage-controlled device. It is designed with a P-channel MOSFET structure that allows for conduction with just a single gate voltage of 3.2V. When the gate voltage is applied, current will flow from the source to the drain. The conduction of electrons is enabled by a depletion region formed between the source and drain. This allows for the rapid switching of currents at high frequencies. The IRFU5505 can conduct a maximum of 1.5A and can withstand drain-source voltage of +-30V. It is also capable of operating at temperatures ranging from -55°C to +150°C.
The IRFU5505 has a highly efficient current switching capability due to its low gate-charge. This enables it to operate at high frequency levels and also minimizes losses in the circuit. It also a low value for RDS(on) allowing for minimal power dissipation within the application. This helps to extend the life of the device and reduce power loss in the circuit.
The IRFU5505 is an ideal choice for power management applications that require efficient current switching capabilities. Its high frequency and low RDS(on) capabilities make it an ideal solution for DC-DC, battery charging and inverter applications. Its low gate-charge also allows it to be used in Class-D audio applications such as solid-state amplifiers.
The specific data is subject to PDF, and the above content is for reference
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