IRFU7440PBF

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRFU7440PBF is a single N-channel enhancement mode power field effect transistor (FET). It has been designed for applications such as DC-DC converters, load switching and also small signal switching devices. This FET is especially suitable for portable products and it can be mounted in a variety of different packages.

The IRFU7440PBF is ideal for low-side switching applications and its low gate charge (Qg) of 4.0nC makes it suitable for high speed switching applications. This FET is designed to reduce on-resistance (RDS(on)) and has a powerful, internal gate charge and an external gate charge. It features a low-noise operating resistance (Rdson) and a high-temperature operating resistance (Tjmax).

The IRFU7440PBF has an ultra-low threshold voltage (Vth) of 250mV and a maximum drain-source voltage (Vds) rating of 30V. It is capable of handling a continuous drain current from 4A to 16A depending on the ambient temperature. It also has a maximum power dissipation rating of 110W at TA = 25°C. The on-resistance value is as low as 3mΩ with a gate threshold voltage (VGS) of 2V.

The working principle of the IRFU7440PBF is based on the generation of the ”door” voltage. When an electric current flows through the metal oxide semiconductor (MOS) layer, a potential difference is created which is called the ”door” voltage and allows the electrons to pass through it which, in turn, creates a current. This current is known as the drain current.

The principle of operation of the IRFU7440PBF is then that the gate voltage (Vgs) sets the ”door” voltage (Vth), and this determines the low drain current (Id) that is allowed. The FET then acts as an electronic switch with the ”doors” allowing only a certain amount of current to pass through per unit time. This current then depends on the gate voltage (Vgs) applied to the FET.

The IRFU7440PBF can be used for a variety of applications such as DC-DC converters, load switching, and small signal switching. For example, it can be used for automotive systems for load switching and as a driver for low-noise high-side switching applications. It can also be used in digital communication systems where low-power dissipation is desired. The IRFU7440PBF is particularly suited to use in portable products where low power dissipation and high switching speed are required.

In conclusion, the IRFU7440PBF is a single N-channel enhancement mode power field effect transistor that is well suited for low side switching applications. It has an ultra-low threshold voltage of 250mV and its maximum drain-source voltage rating is 30V. It can handle a continuous drain current from 4A to 16A. It also has a maximum power dissipation rating of 110W at TA = 25°C and has a low-noise operating resistance. The IRFU7440PBF is particularly suitable for use in a variety of applications such as DC-DC converters, load switching and small signal switching.

The specific data is subject to PDF, and the above content is for reference