Allicdata Part #: | IRFU3711ZPBF-ND |
Manufacturer Part#: |
IRFU3711ZPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 93A I-PAK |
More Detail: | N-Channel 20V 93A (Tc) 79W (Tc) Through Hole IPAK ... |
DataSheet: | IRFU3711ZPBF Datasheet/PDF |
Quantity: | 1000 |
Specifications
Vgs(th) (Max) @ Id: | 2.45V @ 250µA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | IPAK (TO-251) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 79W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2160pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 5.7 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 93A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
Description
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Introduction to IRFU3711ZPBFIRFU3711ZPBF is an enhancement mode, n-channel MOSFET that is produced by Infineon and offers high-speed switching performance along with very low on-resistance. It comes in a small form factor of SO-8 with a drain-source voltage of 37 V and can handle up to a maximum of 28.5 A of continuous drain current. The maximum gate-source voltage is +/-12 V and the transition time from on-to-off is typically 68 ns and vice versa. This MOSFET family is suitable for wet-level applications as it has an excellent gate charge/drain current ratio, making it a great candidate for low power gate driving as well as low frequencies.Application Field and Working Principle of IRFU3711ZPBF MOSFET
The IRFU3711ZPBF MOSFET is useful in many different applications. In Audio and Video Generation and Syntheses, the MOSFET’s fast switching provides high quality digital signal processing with low power consumption. It is also well suited for power supplies and voltage regulation since it is able to handle high switching frequencies quickly with minimal power loss. Additionally, its low on-resistance and high drain current handling capabilities make it a desirable choice for DC motor control as well as Power Factor Correction in AC to DC conversion.The working principle of the IRFU3711ZPBF MOSFET is based on the fact that the Gate-Source voltage determines the current flow through the Drain-Source. When the Gate-Source voltage is below the threshold voltage, current will not flow from the Drain-Source. On the other hand, when the Gate-Source voltage is greater than the threshold voltage, current will flow from the Drain-Source. This is known as “enhancement mode” and it is the mode in which the IRFU3711ZPBF MOSFET operates. The Gate-Source voltage is typically controlled by a signal source, allowing the MOSFET to be switched on and off quickly. Additionally, the low on-resistance makes it possible to quickly change the Drain-Source voltage while maintaining a low power loss.Features and Benefits of IRFU3711ZPBF
The IRFU3711ZPBF has several benefits that make it an attractive choice for many applications. First, the low on-resistance makes it suitable for applications that require high switching frequencies and fast power delivery. Additionally, this MOSFET also offers a high drain current handling capability that makes it suitable for motor control and other power-conversion circuits. Furthermore, it has excellent gate charge/drain current ratio, making it a great candidate for low power gate driving. Lastly, the small form factor of SO-8 makes it easier to mount and less cumbersome to work with in tight spaces.Conclusion
The IRFU3711ZPBF is an excellent choice for a wide variety of applications due to its high switching performance, low on-resistance, and large drain current capabilities. Its small size and easy mounting make it an attractive option for applications where space is at a premium. Additionally, its high gate charge/drain current ratio gives it an advantage when used in low-power gate driving applications. This MOSFET is suitable for wet-level applications, such as Audio and Video Generation and Syntheses, and is an ideal choice for high-frequency power delivery and voltage regulation.
The specific data is subject to PDF, and the above content is for reference
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