IRFU3711ZPBF Allicdata Electronics
Allicdata Part #:

IRFU3711ZPBF-ND

Manufacturer Part#:

IRFU3711ZPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 93A I-PAK
More Detail: N-Channel 20V 93A (Tc) 79W (Tc) Through Hole IPAK ...
DataSheet: IRFU3711ZPBF datasheetIRFU3711ZPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: IPAK (TO-251)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 79W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2160pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 93A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction to IRFU3711ZPBF
IRFU3711ZPBF is an enhancement mode, n-channel MOSFET that is produced by Infineon and offers high-speed switching performance along with very low on-resistance. It comes in a small form factor of SO-8 with a drain-source voltage of 37 V and can handle up to a maximum of 28.5 A of continuous drain current. The maximum gate-source voltage is +/-12 V and the transition time from on-to-off is typically 68 ns and vice versa. This MOSFET family is suitable for wet-level applications as it has an excellent gate charge/drain current ratio, making it a great candidate for low power gate driving as well as low frequencies.Application Field and Working Principle of IRFU3711ZPBF MOSFET
The IRFU3711ZPBF MOSFET is useful in many different applications. In Audio and Video Generation and Syntheses, the MOSFET’s fast switching provides high quality digital signal processing with low power consumption. It is also well suited for power supplies and voltage regulation since it is able to handle high switching frequencies quickly with minimal power loss. Additionally, its low on-resistance and high drain current handling capabilities make it a desirable choice for DC motor control as well as Power Factor Correction in AC to DC conversion.The working principle of the IRFU3711ZPBF MOSFET is based on the fact that the Gate-Source voltage determines the current flow through the Drain-Source. When the Gate-Source voltage is below the threshold voltage, current will not flow from the Drain-Source. On the other hand, when the Gate-Source voltage is greater than the threshold voltage, current will flow from the Drain-Source. This is known as “enhancement mode” and it is the mode in which the IRFU3711ZPBF MOSFET operates. The Gate-Source voltage is typically controlled by a signal source, allowing the MOSFET to be switched on and off quickly. Additionally, the low on-resistance makes it possible to quickly change the Drain-Source voltage while maintaining a low power loss.Features and Benefits of IRFU3711ZPBF
The IRFU3711ZPBF has several benefits that make it an attractive choice for many applications. First, the low on-resistance makes it suitable for applications that require high switching frequencies and fast power delivery. Additionally, this MOSFET also offers a high drain current handling capability that makes it suitable for motor control and other power-conversion circuits. Furthermore, it has excellent gate charge/drain current ratio, making it a great candidate for low power gate driving. Lastly, the small form factor of SO-8 makes it easier to mount and less cumbersome to work with in tight spaces.Conclusion
The IRFU3711ZPBF is an excellent choice for a wide variety of applications due to its high switching performance, low on-resistance, and large drain current capabilities. Its small size and easy mounting make it an attractive option for applications where space is at a premium. Additionally, its high gate charge/drain current ratio gives it an advantage when used in low-power gate driving applications. This MOSFET is suitable for wet-level applications, such as Audio and Video Generation and Syntheses, and is an ideal choice for high-frequency power delivery and voltage regulation.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "IRFU" Included word is 40
Part Number Manufacturer Price Quantity Description
IRFU1018EPBF Infineon Tec... -- 1000 MOSFET N-CH 60V 56A I-PAK...
IRFU2307ZPBF Infineon Tec... 0.0 $ 1000 MOSFET N-CH 75V 42A I-PAK...
IRFU2607ZPBF Infineon Tec... 0.0 $ 1000 MOSFET N-CH 75V 42A I-PAK...
IRFU3806PBF Infineon Tec... -- 1000 MOSFET N-CH 60V 43A I-PAK...
IRFU540ZPBF Infineon Tec... 0.0 $ 1000 MOSFET N-CH 100V 35A IPAK...
IRFU4620PBF Infineon Tec... 0.0 $ 1000 MOSFET N-CH 200V 24A IPAK...
IRFU120ATU ON Semicondu... -- 1000 MOSFET N-CH 100V 8.4A IPA...
IRFU214BTU_FP001 ON Semicondu... 0.0 $ 1000 MOSFET N-CH 250V 2.2A IPA...
IRFU220BTU_F080 ON Semicondu... 0.0 $ 1000 MOSFET N-CH 200V 4.6A IPA...
IRFU220BTU_FP001 ON Semicondu... 0.0 $ 1000 MOSFET N-CH 200V 4.6A IPA...
IRFU120NPBF Infineon Tec... -- 870 MOSFET N-CH 100V 9.4A I-P...
IRFU7440PBF Infineon Tec... -- 450 MOSFET N CH 40V 90A I-PAK...
IRFU3910PBF Infineon Tec... -- 145 MOSFET N-CH 100V 16A I-PA...
IRFUC20PBF Vishay Silic... -- 947 MOSFET N-CH 600V 2A I-PAK...
IRFU224PBF Vishay Silic... 1.25 $ 211 MOSFET N-CH 250V 3.8A I-P...
IRFU9120PBF Vishay Silic... -- 137 MOSFET P-CH 100V 5.6A I-P...
IRFU3607-701PBF Infineon Tec... 0.0 $ 1000 MOSFET N CH 75V 56A IPAKN...
IRFU3607TRL701P Infineon Tec... 0.0 $ 1000 MOSFET N CH 75V 56A IPAKN...
IRFU9024PBF Vishay Silic... 1.09 $ 26 MOSFET P-CH 60V 8.8A I-PA...
IRFU014 Vishay Silic... -- 1000 MOSFET N-CH 60V 7.7A I-PA...
IRFU020 Vishay Silic... -- 1000 MOSFET N-CH 60V 14A I-PAK...
IRFU024 Vishay Silic... -- 1000 MOSFET N-CH 60V 14A I-PAK...
IRFU120 Vishay Silic... -- 1000 MOSFET N-CH 100V 7.7A I-P...
IRFU210 Vishay Silic... -- 1000 MOSFET N-CH 200V 2.6A I-P...
IRFU310 Vishay Silic... -- 1000 MOSFET N-CH 400V 1.7A I-P...
IRFU320 Vishay Silic... -- 1000 MOSFET N-CH 400V 3.1A I-P...
IRFU3303 Infineon Tec... -- 1000 MOSFET N-CH 30V 33A I-PAK...
IRFU420 Vishay Silic... -- 1000 MOSFET N-CH 500V 2.4A I-P...
IRFU5305 Infineon Tec... 0.0 $ 1000 MOSFET P-CH 55V 31A I-PAK...
IRFU5505 Infineon Tec... -- 1000 MOSFET P-CH 55V 18A I-PAK...
IRFU9014 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 60V 5.1A I-PA...
IRFU9020 Vishay Silic... 0.0 $ 1000 MOSFET P-CH 50V 9.9A I-PA...
IRFU9024 Vishay Silic... -- 1000 MOSFET P-CH 60V 8.8A I-PA...
IRFU9110 Vishay Silic... -- 1000 MOSFET P-CH 100V 3.1A I-P...
IRFU9120 Vishay Silic... -- 1000 MOSFET P-CH 100V 5.6A I-P...
IRFU9120N Infineon Tec... -- 1000 MOSFET P-CH 100V 6.6A I-P...
IRFU9210 Vishay Silic... -- 1000 MOSFET P-CH 200V 1.9A I-P...
IRFU9220 Vishay Silic... -- 1000 MOSFET P-CH 200V 3.6A I-P...
IRFU110 Vishay Silic... 0.0 $ 1000 MOSFET N-CH 100V 4.3A I-P...
IRFU1205 Infineon Tec... -- 1000 MOSFET N-CH 55V 44A I-PAK...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics