Allicdata Part #: | IXFP102N15T-ND |
Manufacturer Part#: |
IXFP102N15T |
Price: | $ 3.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 150V 102A TO-220 |
More Detail: | N-Channel 150V 102A (Tc) 455W (Tc) Through Hole TO... |
DataSheet: | IXFP102N15T Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 2.73861 |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 455W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5220pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 87nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 102A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXFP102N15T is a single N-channel MOSFET that has been designed for high-frequency switching applications. The device has a Gate oxide thickness of just 60 angstroms, making it an ideal choice for low-voltage, high-frequency applications. It is also capable of operating at temperatures up to 175°C. The device features a Pdiss of 175 watts and an avalanche energy rating of 316 mJ. The IXFP102N15T has a Pin-Gate capacitance of 5.3 pF, and a Gate to Source capacitance of 13.8 pF. It has an RDS(on) of 4 ohms, meaning that it can be used for efficient power management.
The IXFP102N15T has a wide variety of applications, from low-voltage DC to AC power management applications. It can be used in switching mode power supplies and as an active switch in a DC-DC converter. The device can also be used in automotive applications, such as motor control and in-vehicle networks. It is also capable of operating in medium-power audio amplifiers for applications such as automotive audio. In addition, the IXFP102N15T can be used in industrial applications such as welding, high-voltage distribution, and high-speed electrical circuits.
The working principle of the IXFP102N15T is based on the principle of MOSFETs, which stands for Metal Oxide Semiconductor Field Effect Transistor. The main working principle of a MOSFET is the capacitance coupling between the source and drain terminals. When a voltage is applied to the Gate electrode, an electric field is generated between the source and drain electrodes. The electric field induces a current flow between the source and drain electrodes and the MOSFET is turned “on”. The MOSFET can then be turned “off” by bringing the Gate voltage to a very low value. This enables the IXFP102N15T to function as an electronic switch.
The IXFP102N15T is a very efficient MOSFET that is suitable for a wide variety of applications. Its low Gate oxide thickness makes it ideal for high frequency switching applications. Its low Pin-Gate capacitance and high RDS(on) makes it an efficient choice for power management applications. The device can also withstand high temperatures and is capable of operating at a wide range of voltages. Overall, the IXFP102N15T is an ideal choice for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
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