
Allicdata Part #: | IXFP72N30X3M-ND |
Manufacturer Part#: |
IXFP72N30X3M |
Price: | $ 5.45 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | 300V/72A ULTRA JUNCTION X3-CLASS |
More Detail: | N-Channel 300V 72A (Tc) 36W (Tc) Through Hole TO-2... |
DataSheet: | ![]() |
Quantity: | 298 |
1 +: | $ 4.94550 |
50 +: | $ 4.05468 |
100 +: | $ 3.65910 |
500 +: | $ 3.06572 |
1000 +: | $ 2.67015 |
Gate Charge (Qg) (Max) @ Vgs: | 82nC @ 10V |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | TO-220 Isolated Tab |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 36W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5.4nF @ 25V |
Vgs (Max): | ±20V |
Series: | HiPerFET™ |
Vgs(th) (Max) @ Id: | 4.5V @ 1.5mA |
Rds On (Max) @ Id, Vgs: | 19 mOhm @ 36A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 72A (Tc) |
Drain to Source Voltage (Vdss): | 300V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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The IXFP72N30X3M is one of the many types of power MOSFETs (metal-oxide-semiconductor field-effect transistors) available on the market today. It is a specifically designed device with a specific application field and working principle. This type of transistor is mainly used in high-power switching applications, where it is required to efficiently switch large amounts of current with minimal losses. It has a current rating of up to 72 amperes and its on-state resistance can be as low as 30 milliohms. This makes it suitable for applications such as motor control, high-current switching, and power management circuits. It can also be used in low-voltage, high-current applications such as battery chargers and DC-DC converters.
The device has three main terminals: the gate, the source and the drain. The gate is where a control signal is applied to turn it on or off. Once it is on, the current flows from the source to the drain. The current flow is controlled by a voltage applied to the gate, which is called the threshold voltage. This voltage can range from 4 to 5 volts for this particular type of transistor.
The way the IXFP72N30X3M works is called the enhancement-mode. When the gate voltage is 0 volts or lower, it is off meaning no current will flow. When the gate voltage rises above the specified threshold, it is on meaning current can flow. It is important to note that this voltage must not exceed 5 volts as this could damage the device. When the voltage is removed, it turns off again.
The device has a maximum drain-source voltage (VDS) of 30 volts, meaning that is the maximum voltage that can be applied between the source and the drain. The maximum drain current (IDS) is 72 amperes and the maximum power dissipation (Pd) is 300 watts, meaning that it can handle up to 300 watts of power. In addition, it has a maximum junction temperature of 175 degrees Celsius, meaning that it should not be used in applications where it will be exposed to temperatures above this.
The IXFP72N30X3M is a versatile and powerful MOSFET which can be used in many high current, high voltage applications. It offers excellent switching performance, good power dissipation ability and superior thermal management. Because of these advantages, it is widely used for many industrial applications including motor control, power management, switching, and conduction mode applications. The device is also quite efficient as it has low on-state resistance. This means that it can efficiently switch power with minimal losses.
In conclusion, the IXFP72N30X3M is a high-power MOSFET which is designed for high current and high voltage applications. Because it has an excellent current rating and low on-state resistance, it is highly efficient and offers superior performance in motor control, switching and power management circuits. Additionally, it has a high maximum junction temperature which makes it suitable for applications where it will be exposed to high temperatures. It is ideal for many industrial applications due to its excellent switching performance, high power dissipation and thermal management.
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