IXFP26N50P3 Allicdata Electronics
Allicdata Part #:

IXFP26N50P3-ND

Manufacturer Part#:

IXFP26N50P3

Price: $ 3.08
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 26A TO-220
More Detail: N-Channel 500V 26A (Tc) 500W (Tc) Through Hole TO-...
DataSheet: IXFP26N50P3 datasheetIXFP26N50P3 Datasheet/PDF
Quantity: 1000
50 +: $ 2.77124
Stock 1000Can Ship Immediately
$ 3.08
Specifications
Vgs(th) (Max) @ Id: 5V @ 4mA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2220pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Series: HiPerFET™, Polar3™
Rds On (Max) @ Id, Vgs: 230 mOhm @ 13A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFP26N50P3 is a single N-channel MOSFET transistor device. It is one of the standard components used in a wide variety of applications, including switching and power management, signal processing, and so on. The device is a common drain type, meaning it can be used as either a high or low side switch in a DC/DC converter. In addition, the IXFP26N50P3 is also a very efficient device for application, providing an extremely low on-resistance and very low gate charge.

The application fields of the IXFP26N50P3 are primarily related to its power handling capabilities. Due to its low on-resistance, it can be used as a switch in high current applications, such as power management circuits, power amplifiers, and so on. It can also be used in signal processing and high speed communication circuits due to the low capacitance and The low gate charge present.

The working principle of the IXFP26N50P3, similar to other types of MOSFETs, is based on the principle of an insulated gate FET (IGFET). It consists of a metal gate construction which electrically isolates a channel between the source and drain regions. The gate acts like a voltage-controlled capacitor, and can therefore be used as a variable resistor or conductor. The device is switchable by providing a voltage to the gate, allowing it to turn on or off the channel, thus controlling the flow of current.

The IXFP26N50P3 is constructed specifically to reduce conduction losses, due to itsadvanced construction process. It is thermally enhanced with a reduced silicon die size, which in turn allows it to maintain low operating temperature and dissipate the heat generated by high operating current levels. Additionally, the IXFP28N50P3 is also available in a variety of packages, making it easy to place in physical applications.

In conclusion, the IXFP26N50P3 is a powerful single-channel MOSFET transistor device, used for a wide range of applications due to its low on-resistance and low gate charge. It has significant thermal properties, allowing it to maintain low operating temperatures, and is available in many different packages. As such, the IXFP26N50P3 is highly versatile and can be expected toExcel in a variety of power management applications.

The specific data is subject to PDF, and the above content is for reference

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