IXFP10N80P

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IXFP10N80P is a monolithic insulated gate bipolar transistor (MOSFET) for power applications. It is designed for a variety of applications such as voltage and current regulator, switch, inverter, motor control, DC/DC converters, resonant converter and more.

The IXFP10N80P is designed to provide high performance and reliable operation in power applications up to 800V. It features low on-state resistance (RDS(ON)), fast switching speed, improved thermal characteristics, and excellent amplifier characteristics. In addition, the IXFP10N80P also features a wide safe operating area, built-in thermal protection, and increased power dissipation.

The working principle of IXFP10N80P is the same as other MOSFETs. It is an insulated gate that uses the majority carriers (electrons or holes) to control the conductivity of the semiconductor channel between the source and drain. As the gate voltage changes, the conductivity of the channel is changed, resulting in the flow of current from the source to the drain.

The IXFP10N80P has two main application fields. First, it can be used in motor control, as it offers a wide range of operating voltages and can handle high currents. This makes it useful for high-power, single-phase and three-phase applications. Second, the IXFP10N80P is suitable for DC/DC converters, as it can achieve a high frequency and provides excellent thermal characteristics, while still being able to handle large amounts of power.

In summary, the IXFP10N80P is an insulated gate bipolar transistor (M OSFET) for power applications. It is designed for motor control and DC/DC converter applications and features low on-state resistance (RDS(ON)), fast switching speed, improved thermal characteristics, wide safe operating area, and increased power dissipation. The IXFP10N80P has the same working principle as other MOSFETs, and uses the majority carriers (electrons or holes) to control the conductivity of the semiconductor channel between the source and drain.

The specific data is subject to PDF, and the above content is for reference