Allicdata Part #: | IXFP7N100P-ND |
Manufacturer Part#: |
IXFP7N100P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1000V 7A TO-220 |
More Detail: | N-Channel 1000V 7A (Tc) 300W (Tc) Through Hole TO-... |
DataSheet: | IXFP7N100P Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 6V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2590pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 10V |
Series: | HiPerFET™, PolarP2™ |
Rds On (Max) @ Id, Vgs: | 1.9 Ohm @ 3.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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:IXFP7N100P is a popular vertical N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). It typically is used in power switching or analog circuits within consumer and industrial applications. The IXFP7N100P can be used in situations where relatively low threshold voltage and low on-resistance is desired with a sufficient load current capability. It is typically used in switching and regulated power supply applications, allowing design flexibility in an array of power delivery applications in consumer electronics such as motor drives, AC switching, automotive power applications, solar power conversion, and other industrial and consumer power conversion as well.
MOSFETs, or Metal Oxide Semiconductor Field-Effect Transistors, are highly versatile semiconductors used in numerous digital and analog electronics projects. They are commonly used as switches because they are able to handle high voltage and power with very low input current. The IXFP7N100P is a N-channel MOSFET, meaning the current flows between the source and the drain when a voltage is applied to the gate. This voltage is referred to as the “gate threshold voltage”, and the typical application for the IXFP7N100P is one in which a relatively low gate threshold voltage and low on-resistance of the MOSFET is desired.
The IXFP7N100P is designed to be an efficient power switching device, with an on-state resistance of 7 milliohms and an off-state resistance of more than 1 x 10^14Ω. It has a maximum drain current capability of 8.9A and a maximum D-S voltage of 600V. The IXFP7N100P has an excellent performance profile compared to competitive devices, particularly in the areas of on-resistance and gate charge. Additionally, its low gate threshold voltage allows it to be used in a variety of applications.
The IXFP7N100P also has an operating temperature range of -55°C to 175°C, making it an excellent choice for applications that require a wide temperature range or that are exposed to extreme temperatures. Additionally, the IXFP7N100P is RoHS compliant and can be used in automotive applications in accordance with Automotive Electronics Council standards.
In summary, the IXFP7N100P is an ideal choice for designers who require an efficient power switching device with a low on-resistance and low gate threshold voltage. It has a broad operating temperature range and can be used in numerous applications, from consumer electronics to industrial and automotive applications. With its wide range of features, the IXFP7N100P is an excellent choice for designers seeking a highly efficient, reliable, and cost-effective power switching device for their projects.
The specific data is subject to PDF, and the above content is for reference
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