Allicdata Part #: | IXFP5N100P-ND |
Manufacturer Part#: |
IXFP5N100P |
Price: | $ 2.44 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1000V 5A TO-220 |
More Detail: | N-Channel 1000V 5A (Tc) 250W (Tc) Through Hole TO-... |
DataSheet: | IXFP5N100P Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 2.20072 |
Vgs(th) (Max) @ Id: | 6V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1830pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 33.4nC @ 10V |
Series: | HiPerFET™, PolarP2™ |
Rds On (Max) @ Id, Vgs: | 2.8 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXFP5N100P is an N‐channel MOSFET (Metal-oxide-semiconductor field-effect transistor) manufactured by IXYS Corporation. The MOSFET transistors are widely used in consumer electronics and other applications that require the switching and amplification of electrical signals. The IXFP5N100P is suitable for applications such as switching and amplifying low voltage signals, including logic buffers, small amplifiers and power supplies.
MOSFET transistors have three terminals: a source, a gate, and a drain. The source terminal is connected to the supply voltage (or ground) and serves as a source of current to the gate. The gate terminal is used to control the voltage applied to the drain and gate terminals, while the drain terminal is connected to the load or output device. The IXFP5N100P is an N-channel MOSFET, which means that the gate is positively biased relative to the source, and electrons will flow from the source to the drain when a positive voltage is applied to the gate. When the gate voltage is reduced, the flow of electrons is reduced and the current through the transistor is also reduced.
The IXFP5N100P is a power MOSFET, which is optimized for use with low voltage and low power applications. It has a maximum power dissipation of 900 mW with a 50 volt drain-to-source voltage, and has a maximum drain-source voltage of 50 volts and a maximum gate-source voltage of 10 volts. It is designed to have a higher efficiency than standard MOSFETs, with a low threshold voltage of 1.5 volts and a low on-state drain-source resistance of 0.24 ohms.
The IXFP5N100P has a wide range of applications due to its high efficiency and low power dissipation. It is commonly used in low voltage applications such as logic buffers, power supplies, low power amplifiers, and switching circuits. It is also widely used in consumer electronics, such as TVs, game consoles, and other electronic devices.
In conclusion, the IXFP5N100P is an N-channel MOSFET that is optimized for use with low voltage and low power applications. It has a wide range of applications due to its high efficiency, low threshold voltage and drain-source resistance. It is used in a wide range of applications, such as logic buffers, power supplies, low power amplifiers, and switching circuits.
The specific data is subject to PDF, and the above content is for reference
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