Allicdata Part #: | IXFP130N10T2-ND |
Manufacturer Part#: |
IXFP130N10T2 |
Price: | $ 2.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 100V 130A TO-220 |
More Detail: | N-Channel 100V 130A (Tc) 360W (Tc) Through Hole TO... |
DataSheet: | IXFP130N10T2 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 2.11919 |
Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 360W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6600pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 130nC @ 10V |
Series: | GigaMOS™, HiPerFET™, TrenchT2™ |
Rds On (Max) @ Id, Vgs: | 9.1 mOhm @ 65A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 130A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXFP130N10T2 is a device belonging to the family of IGBT (Insulated Gate Bipolar Transistors) devices. Featuring a three-terminal semiconductor device, IGBTs are classified as a type of power semiconductor device. It has been used in a wide range of applications owing to its self-commutating capability and ability to switch large currents.
The IXFP130N10T2 utilizes a vertical structure designed for IGBTs, allowing the device to operate with a high breakdown voltage. A synchronous rectifier supplies a low-loss rectifier output to the IXFP130N10T2. This eliminates noise and reduces losses. With a peak voltage of 600V, the IXFP130N10T2 is suitable for a range of motor drive applications.
At the heart of the IXFP130N10T2 lies an N Channel MOSFET, illuminated and enhanced by an insulated gate driver. MOSFETs are transistors that use an input voltage applied to the gate to control the current passing through the drain and source terminals. This arrangement allows the IXFP130N10T2 to be used as a power switch, allowing it to be operated in the on or off state.
The gates of MOSFETs are complex structures and require special treatment in order to produce reliable operations. In IXFP130N10T2, the gate is insulated with a thick silicon dioxide layer and is connected to the insulated gate driver. The gate driver is provided with a dedicated supply voltage and is capable of supplying high current capability to ensure that the gate exhibits the desired behaviour. This gate drive coupled with the MOSFET structure enable the IXFP130N10T2 to achieve up to 100 A of current, making it suitable for the most demanding applications.
IXFP130N10T2 is suitable for motor-drive applications including motor control for washing machines, dishwashers, pumps and other medium-power motor-drive applications. The device also finds application in power supplies, inverters, solenoids etc. as it can bear large currents in a very short period of time.
Due to the advantages of IXFP130N10T2, it has gained popularity and is used in many applications. Its main advantages are its self-commutating capability and its ability to switch large currents, along with the fact that it is suitable for high-voltage applications. Additionally, IXFP130N10T2 devices are easy to assemble and, due to their reliable performance, have proven to be a reliable solution. This makes the IXFP130N10T2 a suitable choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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