IXFP7N80P Allicdata Electronics
Allicdata Part #:

IXFP7N80P-ND

Manufacturer Part#:

IXFP7N80P

Price: $ 2.32
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 800V 7A TO-220
More Detail: N-Channel 800V 7A (Tc) 200W (Tc) Through Hole TO-2...
DataSheet: IXFP7N80P datasheetIXFP7N80P Datasheet/PDF
Quantity: 1000
50 +: $ 2.08656
Stock 1000Can Ship Immediately
$ 2.32
Specifications
Vgs(th) (Max) @ Id: 5V @ 1mA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Series: HiPerFET™, PolarHT™
Rds On (Max) @ Id, Vgs: 1.44 Ohm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFP7N80P is a MOSFET device belonging to the family of vertical double-diffused, N- type MOSFETs developed especially for high voltage, low-current power electronics applications. It is extremely useful in many fields where its capabilities make it a versatile and dependable choice for controlling DC power. In this article, the IXFP7N80P application field and its working principle will be explored.

IXFP7N80P Application Field

The IXFP7N80P has a number of different applications, which are often determined by its salient features. One of the key roles of the IXFP7N80P is in power switching and DC control applications, particularly in automotive applications. This is due to the device\'s high-voltage breakdown rating, which enables it to withstand larger voltages than other MOSFETs. The IXFP7N80P is also suitable for DC/DC and AC/DC converters, as well as in power supply designs that require logic level interfaces. Other applications include AC motor control, lighting system controls, and energy management systems.

IXFP7N80P Working Principle

The IXFP7N80P is an N- type MOSFET, and it operates in the same way as any other MOSFET. The device consists of two main regions, the source region and the drain region. The source region is connected to the negative potential, and the drain region is connected to the positive potential. A voltage difference between the two terminals causes a MOSFET channel to form in the silicon, and this allows current to flow from the source to the drain. The width of the channel is controlled by a gate terminal, which is connected to a control voltage. When the voltage on the gate terminal is raised, the channel is widened and more current is allowed to flow between the source and the drain.

The IXFP7N80P is designed to be an efficient and reliable switch, and as such it is capable of switching at high frequency. This enables the device to be used in applications that require tight control, such as power supplies and DC motor controls. Additionally, the device has a low-on-resistance and a high-avalanche rating, which means that it can handle high transient voltages and large current surges, making it suitable for controlling high-power circuits.

Conclusion

The IXFP7N80P is a highly versatile MOSFET device, which can be used in a wide range of applications. Its features make it a reliable choice for controlling DC power, and its high-voltage breakdown rating and low-on-resistance make it suitable for high-power circuits. With its high-frequency switching capabilities, the IXFP7N80P is an excellent choice for applications such as AC and DC motor controls, energy management systems, and lighting systems. All in all, the IXFP7N80P is an excellent choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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