Allicdata Part #: | IXFP12N50PM-ND |
Manufacturer Part#: |
IXFP12N50PM |
Price: | $ 1.81 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 500V 6A TO-220 |
More Detail: | N-Channel 500V 6A (Tc) 50W (Tc) Through Hole TO-22... |
DataSheet: | IXFP12N50PM Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.63019 |
Vgs(th) (Max) @ Id: | 5.5V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1830pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Series: | HiPerFET™, PolarP2™ |
Rds On (Max) @ Id, Vgs: | 500 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXFP12N50PM is a series of field effect transistors (FETs) that are used in a variety of power management, motor control, and data storage applications. They are used to transfer power from one circuit to another or from one device to another in a very effective and efficient manner. The IXFP12N50PM series is a type of MOSFET, which stands for metal-oxide-semiconductor field-effect transistor. This type of transistor is very common in electronics. It is constructed from a few layers of metal and a semiconductor material that acts as an insulator. The layers are then arranged in a specific manner that allows it to perform its functions in a very effective way.
One of the main advantages of this type of transistor is its low on-resistance. This is important when using it in applications where high current is needed. This MOSFET has an on-resistance of only 0.027 Ohms. This allows it to transfer more power with less energy being lost in the process. This property makes it suitable for power management and motor control applications.
Another advantage of this type of MOSFET is its high switching speed. This makes it ideal for data storage applications, which requires a fast response time from the transistor. It has a maximum switching speed of 10 nanoseconds, giving it a very short reaction time when compared to other types of transistors.
The IXFP12N50PM also has exceptionally low leakage current. This is necessary in applications where power needs to be managed with precision. The transistor has a very low gate capacitance, which means it does not draw a lot of current from the circuit when it is turned off. This also increases its energy efficiency, as less electricity is needed to turn it on and off.
The IXFP12N50PM can be used in a variety of applications, such as power management, motor control, and data storage. It is an excellent choice for those who need a reliable, efficient and fast way to transfer power between circuits. Its low on-resistance, high switching speed, and low gate capacitance make it highly suitable for these applications.
The specific data is subject to PDF, and the above content is for reference
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