
Allicdata Part #: | IXFP8N50PM-ND |
Manufacturer Part#: |
IXFP8N50PM |
Price: | $ 1.51 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 500V 4.4A TO-220 |
More Detail: | N-Channel 500V 4.4A (Tc) 42W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 1000 |
50 +: | $ 1.35841 |
Vgs(th) (Max) @ Id: | 5.5V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 42W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1050pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | HiPerFET™, PolarHT™ |
Rds On (Max) @ Id, Vgs: | 800 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.4A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Last Time Buy |
Packaging: | Tube |
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The IXFP8N50PM is a type of insulated-gate field-effect transistors (IGFETs) commonly known as MOSFETs (metal-oxide semiconductor field-effect transistors). It is a single-channel, N-channel enhancement-mode device designed for medium voltage applications such as in switch-mode power supplies, motor control and high-frequency power converters.
MOSFETs are used since they have the advantage of being extremely small and thus more densely packed on a chip than other types of transistors. They are also much less prone to thermal runaway than bipolar junction transistors which require higher current control to prevent damage. This makes them ideal for fast switching applications where they can operate quickly and efficiently.
The IXFP8N50PM is a good choice for medium to high voltage applications due to its low on-state resistance (RDS(on)), fast switching time, and high breakdown voltage. It is typically housed in an SO-8 or TO-220 package, and can provide up to 500 volts of breakdown voltage when gate to source voltage (Vgs) is controlled between 5 volts and 11 volts.
The IXFP8N50PM works on the principle of channel enhancement. When a positive voltage is applied to the gate, it inverts the substrate and attracts electrons to the inversion layer. The inversion layer then acts as a conducting channel between drain and source and a current then flows from drain to source, allowing the flow of current from drain to source.
The IXFP8N50PM is capable of handling high currents and is also relatively immune to electrical noise. This makes it suitable for high-power switching applications such as static relays, motor controls and high-frequency power converters. It is also suitable for many specialized applications such as switching high-power batteries, solenoids and lamps.
Overall, the IXFP8N50PM is an excellent choice for medium and high voltage applications due to its low on-state resistance, fast switching times, and high breakdown voltage. It is widely used in motor control, power supplies, and high-frequency power converters. With its low on-state resistance, it is able to switch quickly and efficiently at high power levels. This makes it ideal for fast switching applications that require high current control, high breakdown voltage, and fast switching times.
The specific data is subject to PDF, and the above content is for reference
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