
Allicdata Part #: | IXFP7N60P3-ND |
Manufacturer Part#: |
IXFP7N60P3 |
Price: | $ 1.49 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 600V 7A TO-220 |
More Detail: | N-Channel 600V 7A (Tc) 180W (Tc) Through Hole TO-2... |
DataSheet: | ![]() |
Quantity: | 1000 |
50 +: | $ 1.34039 |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 180W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 705pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 13.3nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 1.15 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFP7N60P3 is a single MOSFET transistor chip that is manufactured by IXYS Integrated Circuits. This type of transistor is a field-effect transistor that operates using Metal Oxide Semiconductor (MOS) technology to provide a high input impedance. This type of transistor has a wide range of applications and is capable of handling high power supplies without any degradation in performance. The IXFP7N60P3 has a voltage rating of 600 Volts and can supply up to 5.8 Amps of continuous current.
The IXFP7N60P3 chip has many applications in the field of power electronics because it can handle higher voltage and current levels than many other transistors. It is used as a switch in a variety of circuits, such as switching power supplies, converters, and inverters. Additionally, it can be used as a power amplifier to boost the output of an audio signal. It is also used in solar panel controllers and other related equipment, in order to turn on and off the power to the panels.
The working principle of the IXFP7N60P3 is based on the basic MOSFET principle. This type of transistor is a three-terminal device. The source terminal is connected to the source of the power supply, the gate terminal is connected to a control voltage, and the drain terminal is connected to the load. When a positive voltage is applied to the gate terminal, it creates an electric field, which attracts electrons and creates a conduction channel between the source and the drain. This channel allows current to pass and the device is said to be "on". When the voltage applied to the gate is reduced, the electric field is reduced and the channel is blocked, this is known as the "off" state.
The gate voltage and the gate current are the two main factors that determine the operation of the device. The gate current is an indication of the amount of current passing through the channel, and the gate voltage determines the shape of the channel and the size of the channel. The resistance of the channel and the current carrying capacity of the device depend on the gate voltage and the gate current. If a higher gate voltage is applied, the resistance of the channel will increase and the current capacity of the device will increase.
The IXFP7N60P3 is a highly efficient and reliable device that offers low resistance, high current capacities, and low power loss, enabling it to be used in all types of power electronics applications. It is also capable of switching quickly, making it ideal for use in high-frequency applications. With its excellent features, it is one of the most versatile and widely used transistors available today.
The specific data is subject to PDF, and the above content is for reference
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