Allicdata Part #: | IXFP6N120P-ND |
Manufacturer Part#: |
IXFP6N120P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1200V 6A TO-220AB |
More Detail: | N-Channel 1200V 6A (Tc) 250W (Tc) Through Hole TO-... |
DataSheet: | IXFP6N120P Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2830pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 92nC @ 10V |
Series: | HiPerFET™, PolarP2™ |
Rds On (Max) @ Id, Vgs: | 2.4 Ohm @ 500mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drain to Source Voltage (Vdss): | 1200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXFP6N120P Application Field and Working Principle
The IXFP6N120P is a Field-effect Transistor (FET) which is often referred to as an insulated-gate FET. It belongs to the MOSFET family. It is designed specifically for low voltage and medium frequency applications, making it ideal for use in automotive and power hand tools. This article will discuss the application field and working principle of the IXFP6N120P.
Application Field of IXFP6N120P
The IXFP6N120P is an N-channel MOSFET, which makes it suitable for a wide range of uses. It can be used in power management circuits and in switch mode power supply circuits, as well as in motor speed control and DC-to-DC conversions. It is also well-suited for use in battery powered equipment, lamps, and portable electronics.
This component is particularly well-suited to automotive applications. This is due to its ability to handle high voltage and current, as well as its fast switching speeds which are not affected by temperature. This FET can also be used in motor speed control due to its ability to quickly open and close low current circuits, making it particularly well-suited to cover high current applications.
Working Principle of IXFP6N120P
The IXFP6N120P is an N-channel MOSFET, which means that it is composed of a semiconductor material in which a gate electrode is placed over the surface. This gate is separated from the semiconductor by a thin dielectric layer which prevents the flow of electrons, thereby controlling the flow of current.
When a voltage is applied to the gate, the electric field generated causes "gate inversion" - the electrons from the channel are pulled toward the gate and the channel conducts current. The voltage applied to the gate is known as the "gate-source voltage." When the gate-source voltage exceeds a certain threshold, the channel conducts current, and the current flow can then be controlled by changing the voltage applied to the gate.
The IXFP6N120P is designed to minimize power loss due to the power dissipated by the FET when the channel is opened. It uses a special process which enables a low on-resistance, making it ideal for power conversion and switch mode power supplies.
Conclusion
The IXFP6N120P is an N-channel MOSFET which is designed for low voltage and medium frequency applications. It can be used in a wide range of applications including power management circuits, switch mode power supplies, and motor speed control. It has a low on-resistance which makes it ideal for power conversion and switch mode power supplies. The working principle of the IXFP6N120P revolves around the ability of the gate to control the flow of current by applying a voltage to the gate.
The specific data is subject to PDF, and the above content is for reference
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