| Allicdata Part #: | IXFP230N075T2-ND |
| Manufacturer Part#: |
IXFP230N075T2 |
| Price: | $ 3.49 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 75V 230A |
| More Detail: | N-Channel 75V 230A (Tc) 480W (Tc) Through Hole TO-... |
| DataSheet: |  IXFP230N075T2 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 3.49000 |
| 10 +: | $ 3.38530 |
| 100 +: | $ 3.31550 |
| 1000 +: | $ 3.24570 |
| 10000 +: | $ 3.14100 |
| Vgs(th) (Max) @ Id: | 4V @ 1mA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 480W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 10500pF @ 25V |
| Vgs (Max): | -- |
| Gate Charge (Qg) (Max) @ Vgs: | 178nC @ 10V |
| Series: | HiPerFET™, TrenchT2™ |
| Rds On (Max) @ Id, Vgs: | 4.2 mOhm @ 50A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 230A (Tc) |
| Drain to Source Voltage (Vdss): | 75V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXFP230N075T2 are single N-Channel MOSFETs with low on-resistance, low gate charge and high fast switching speed. These devices are gaining in popularity due to their decreases switching losses and improved reliability. The devices are available in small leadless and leaded packages, making them a good fit for high temperature and high-power applications.
The IXFP230N075T2 is a vertical single N-Channel MOSFET, meaning it has one drain, one source and one gate. The device is constructed with a vertical structure of ultra-thin epitaxial layer and dual gate oxide, providing low resistance and high breakdown voltage. The gate oxide layer is composed of a thin gate oxide layer and a thicker oxide layer to optimise oxide gate threshold voltage and gate capacitance.
The IXFP230N075T2 device operates in the depletion mode, meaning the device is off when there is no signal applied to the gate. When a voltage is applied to the gate, it will create a conductive channel between the source and drain. This channel can be controlled by adjusting the gate voltage, allowing the device to be used in a variety of applications.
The IXFP230N075T2 is well-suited for applications where high-speed switching is required, such as DC-DC converters, motor drives, LED lighting drivers and power supplies. It is also ideal for use in automotive navigation systems, computer systems and industrial applications requiring low on-resistance and low gate charge. The device is also able to withstand higher temperatures, making it suitable for automotive and other high-temperature applications.
In addition to its high-speed switching abilities, the IXFP230N075T2 is also capable of high-current flows with a maximum continuous current rating of 7.5A and a maximum peak current rating of 22A. This makes the device suitable for power applications such as DC motors, UPS units and industrial equipment.
To ensure proper operation, the IXFP230N075T2 should be placed in a well-ventilated area in order to dissipate the heat generated by the device. It is also important to ensure the power supply has a good impedance match with the device in order to obtain the maximum efficiency from the device. The device is available in both leaded and leadless packages for convenient integration and assembly.
The IXFP230N075T2 is a reliable and efficient device, making it a great choice for high-power applications. Its low on-resistance, high-switching speed, and high-temperature ratings make it suitable for use in automotive, industrial, and high-temperature applications. The device is also capable of withstanding high currents, making it ideal for power electronics.
The specific data is subject to PDF, and the above content is for reference
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