
Allicdata Part #: | IXFP130N15X3-ND |
Manufacturer Part#: |
IXFP130N15X3 |
Price: | $ 4.26 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH |
More Detail: | N-Channel 150V 130A (Tc) 390W (Tc) Through Hole TO... |
DataSheet: | ![]() |
Quantity: | 1000 |
50 +: | $ 3.83191 |
Vgs(th) (Max) @ Id: | 4.5V @ 1.5mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 390W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5230pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 65A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 130A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXFP130N15X3 is a type of field-effect transistor (FET), specifically a metal-oxide-semiconductor field-effect transistor (MOSFET). It is a three-terminal device that works by controlling the voltage between the two outer terminals, referred to as the drain and source, with the gate terminal. The IXFP130N15X3 is a popular choice for high power applications that require a fast switching performance with very low gate charge.
The IXFP130N15X3 is suitable for a range of applications due to its high current capabilities and its low input capacitance. It is often used in high-power switching applications, such as in motor controllers, computer power supplies, and motor drives. It can also be used in high-frequency amplifier applications, where switching frequency is important. Additionally, the IXFP130N15X3 can be used in audio frequency applications such as power amplifiers and pulse-width modulation (PWM) control circuits.
The working principle of the IXFP130N15X3 is based on the field-effect concept. This involves controlling the flow of electrons between the source terminal and the drain terminal by applying a voltage to the gate terminal. When the voltage between the gate and the source is less than the threshold voltage of the device, the current flow between the source and the drain is blocked. When the voltage between the gate and the source is greater than the threshold voltage, the current flow through the device is enabled. The IXFP130N15X3 is capable of operating at a wide range of voltages and currents and can switch at very high speeds.
The IXFP130N15X3 is designed to operate in standard surface-mount packages and is typically supplied in an SO-8 or D2PAK package. It features a low gate charge and low output capacitance which enables it to switch at high speeds with low losses. Additionally, the IXFP130N15X3 can be used in both DC and AC operation, making it suitable for a wide range of applications.
Overall, the IXFP130N15X3 is a versatile MOSFET that can be used in many high power applications that require a fast switching performance. Its features make it suitable for both high power switching and audio frequency applications, while its ability to operate over a wide range of voltages and currents makes it an ideal choice for a range of high power applications.
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