IXFP76N15T2

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	350W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5800pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	97nC @ 10V
Series:	HiPerFET™, TrenchT2™
Rds On (Max) @ Id, Vgs:	20 mOhm @ 38A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	76A (Tc)
Drain to Source Voltage (Vdss):	150V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction to IXFP76N15T2

The IXFP76N15T2 is a N-channel logic level field-effect transistor (FET) often used in switching applications. It can handle load currents of up to 7.6 amps, with a maximum drain-to-source voltage of 15 volts. This FET features low on-resistance for high efficiency and low power loss at high frequencies and reverse-bias safe operating area.

Application Field and Working Principle

The IXFP76N15T2 provides superior performance in numerous switching applications, such as DC motors, solenoids, relays, solenoid valves, DC power supplies, general-purpose switches, and audio amplifiers, among other applications.The IXFP76N15T2 comprises an integrated source, drain and gate terminal, which makes it an attractive choice for several low power-consuming applications such as load switching, electronic load switching, and load sensing. The working principle of the IXFP76N15T2 is based on voltage conduction. The effection of the IXFP76N15T2 is determined by the magnitude of the voltage applied at the gate terminal. When no voltage is applied at the gate, it functions as an open switch, allowing no current to pass through. When a voltage is applied to the gate, it acts as a closed switch, allowing current to flow through the drain and source terminals.The principle of operation of the IXFP76N15T2 can be best explained with the aid of a circuit diagram. A basic FET circuit has the following components: a DC power supply, the FET, a resistor, and a diode. The diode is used for protection against reverse-bias voltages. The resistor is used for limiting the drain-source current and preventing possible damage due to overload. When a voltage is applied between the source and the gate terminal, a depletion region forms in the channel. This depletion region is caused by the presence of a negative gate-source bias which limits the current through the channel. The depletion region acts as a barrier to the flow of current and restricts the current flow through the drain terminal. The resulting effect is that a low-resistance path is established between the source and the drain terminals, thus allowing current to flow in one direction.The IXFP76N15T2 has a lower "on-resistance" than other similar FETs and can provide high efficiency for a wide range of frequencies. This makes it the perfect choice for switching higher frequency signals. The device also features a high-frequency response and can provide a good amount of power-handling capability.

Conclusion

The advantages of the IXFP76N15T2 make it an ideal choice for applications that require a large current-handling capability and efficiency. The device\'s low on-resistance ensures high efficiency and low power loss at high frequencies, making it suitable for applications requiring high speed switching. Additionally, the IXFP76N15T2 has a reverse-bias safe operating area and high-frequency response, making it an excellent choice for applications with changing load conditions.

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