IXFP3N50PM

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXFP3N50PM is a single N-channel PowerTrench Field Effect Transistor (FET) designed for the PWM and general purpose switching applications. This power MOSFET device is rated at 50Amps and 500V and provides superior performance in both switching and linear applications because of its low on-state resistance. This transistor is built with a process that combines advanced low voltage PowerTrench technology and Co-P substrate. It is capable of operating at temperatures between -55°C and 150°C junction.

Application Field

The IXFP3N50PM is ideal for use in wide range of PWM applications, DC/DC converters, motor controls, solenoid drivers, relay drivers and other high power switching applications. This power MOSFET device is also suitable for electric vehicle applications for its high blocking voltage and low thermal resistance. It can be used in consumer applications including appliances, lighting, HVAC systems, UPS, PC hard drives and lighting ballasts.

Working Principle

The IXFP3N50PM is designed to operate as an electrical switch. It is a four-terminal device whose gate-to-source voltage (VGS) determines whether it is fully on or fully off. When the VGS is higher than the threshold voltage (VTH), the device will be fully on and allow current to flow from the drain to the source. When the VGS is below the VTH, the device will be fully off and no current will flow. This operating principle is similar to a “switch”, where the gate voltage functions to turn the conductivity “on” or “off”.

The IXFP3N50PM is designed to handle power up to 500V and 50A. Its low on-state resistance (RDS(on)) provides superior switching performance. The maximum drain-source breakdown voltage (BVDSS) is 500V and its maximum drain current (ID) is 50A. The maximum junction temperature (Tj) is 150°C. Furthermore, its avalanche energy capability is satisfactory and it has excellent fast recovery characteristics.

In conclusion, the IXFP3N50PM PowerTrench Field Effect Transistor (FET) is a great choice for a variety of PWM applications, DC/DC converters, motor controls, solenoid drivers, and other high power switching applications. It has a low on-state resistance, enabling superior switching performance and excellent fast recovery characteristics. Furthermore, its avalanche energy capability is satisfactory and it has a maximum drain-source breakdown voltage of 500V and a maximum drain current of 50A.

The specific data is subject to PDF, and the above content is for reference