| Allicdata Part #: | IXFP12N65X2-ND |
| Manufacturer Part#: |
IXFP12N65X2 |
| Price: | $ 1.81 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH |
| More Detail: | N-Channel 650V 12A (Tc) 180W (Tc) Through Hole TO-... |
| DataSheet: |  IXFP12N65X2 Datasheet/PDF |
| Quantity: | 1000 |
| 50 +: | $ 1.63019 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 180W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1134pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 18.5nC @ 10V |
| Series: | HiPerFET™ |
| Rds On (Max) @ Id, Vgs: | 310 mOhm @ 6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The IXFP12N65X2 is an advanced N-channel field-effect transistor that is designed for high-speed power switching applications. It offers advantages such as low on-state resistance, fast switching speeds, and high reliability.
Overview
The IXFP12N65X2 transistor is designed for use in high-current, high-speed switching applications such as switches and relay drivers. It is an N-channel enhancement-mode device with a 12A drain current and 650V drain-source voltage rating. It has extremely low on-state resistance, a high switching speed, and high reliability.
Features
The IXFP12N65X2 has several features that make it well-suited for use in high-speed and high-power applications. These features include:
- Low on-state resistance: The IXFP12N65X2 has an on-state resistance of only 4mΩ, which allows for fast switching.
- High switching speed: The IXFP12N65X2 can switch from on to off in only 4ns, making it suitable for applications that require very fast switching speeds.
- High reliability: The IXFP12N65X2 has a rated lifetime of 10 million cycles, making it highly reliable for long-term operation.
Applications
The IXFP12N65X2 is well-suited for use in high-power, high-speed switching applications such as relays, switches, and inductive loads. It is also suitable for use in power supplies and inverters. In addition, the IXFP12N65X2 is suitable for use in various automotive applications such as power train control, electronic stability control, and brake systems.
Working Principle
The IXFP12N65X2 is an N-channel enhancement-mode power MOSFET. This means that when a voltage is applied to the gate of the MOSFET, it will turn on with very low resistance. This low resistance is what allows for the high switching speed and low on-state resistance that is characteristic of the IXFP12N65X2. The MOSFET will remain in the on state as long as there is a voltage applied to the gate. When the voltage is removed, the current will be stopped and the MOSFET will turn off. This makes it suitable for use in high-power and high-speed switching applications.
Conclusion
The IXFP12N65X2 is an advanced N-channel field-effect transistor that is designed for high-speed power switching applications. It has low on-state resistance and high switching speeds, making it well-suited for use in various applications such as relays, switches, inductive loads, and automotive applications. It is an enhancement-mode power MOSFET and can be turned on and off by applying a voltage to the gate.
The specific data is subject to PDF, and the above content is for reference
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