Allicdata Part #: | IXFP180N10T2-ND |
Manufacturer Part#: |
IXFP180N10T2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 100V 180A TO-220 |
More Detail: | N-Channel 100V 180A (Tc) 480W (Tc) Through Hole TO... |
DataSheet: | IXFP180N10T2 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 480W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 10500pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 185nC @ 10V |
Series: | GigaMOS™, HiPerFET™, TrenchT2™ |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 180A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFP180N10T2 is a POWER MOSFET, commonly known as a field-effect transistor (FET). These transistors are used as electronic switches in a wide range of electronic applications and devices. This type of transistor is available in a variety of sizes and packages, including SMD (Surface Mount Devices). It is designed to operate over a wide range of frequencies and voltages. The IXFP180N10T2 is a power MOSFET that is used in many applications and is an ideal solution for those requiring a high performance and reliable switching device.
The IXFP180N10T2 has several features that make it an attractive choice for many applications. These features include a low input capacitance, low on-resistance, and fast switching speeds. In addition, the device has a high integration density, high power dissipation capabilities, and a small footprint. It also has a wide operating temperature range, which makes it suitable for use in various environments. Furthermore, it is highly resistant to ESD (electrostatic discharge) and other types of static electricity.
The working principle of the IXFP180N10T2 involves applying a voltage to the gate of the transistor. This creates an electric field in the gate that modulates the current flowing between the two drain terminals. The transfer of electrons through the changed electric field will subsequently cause an increase of the drain current. In this way, the IXFP180N10T2 can be used as an electronic switch, regulating the current in an electronic circuit.
The IXFP180N10T2 is suitable for many applications, including power control, motor control, switching power supplies, and protection circuits. It is also widely used in power management for energy-saving and efficiency optimization. The IXFP180N10T2 is widely used in automotive and industrial applications where reliable power control is a must. Additionally, the device can handle high power switching applications such as DC to AC inverters, solar power systems, and other renewable energy systems.
The IXFP180N10T2 has high current carrying capacity and is excellent for high frequency applications due to its low On-resistance. It is also very reliable and can be used in harsh environments thanks to its wide temperature range. This makes it ideal for a range of uses, including power control, motor control, switching power supplies, and protection circuits.
Overall, the IXFP180N10T2 is a power MOSFET designed to provide high performance, reliability, and versatility. It has a low input capacitance, low on-resistance, and fast switching speeds, as well as a wide temperature range and excellent ESD protection. These features make it ideal for a range of electronic applications and devices.
The specific data is subject to PDF, and the above content is for reference
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