IXFP8N50P3 Allicdata Electronics
Allicdata Part #:

IXFP8N50P3-ND

Manufacturer Part#:

IXFP8N50P3

Price: $ 1.71
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 8A TO-220
More Detail: N-Channel 500V 8A (Tc) 180W (Tc) Through Hole TO-2...
DataSheet: IXFP8N50P3 datasheetIXFP8N50P3 Datasheet/PDF
Quantity: 1000
50 +: $ 1.53959
Stock 1000Can Ship Immediately
$ 1.71
Specifications
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 180W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Series: HiPerFET™, Polar3™
Rds On (Max) @ Id, Vgs: 800 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFP8N50P3 is a single-pole, enhancement-mode, field-effect transistor (FET). It is a versatile and reliable component that is suitable for a wide range of applications and is widely used in consumer electronics and other high current devices. The IXFP8N50P3 is a monolithic device with an ion-implantable, P-channel MOSFET; the field plate is the gate, and the gate and drain contacts are the sited on the same plane.

The IXFP8N50P3 is designed to handle high power levels quickly from heavy load and can handle up to 8A and as much as 50V. Its high blocking voltage makes it suitable for many power switching applications, allowing the user to switch between several circuits with a high degree of accuracy and safety. The IXFP8N50P3 offers fast switching speeds, which can provide benefits when high speed, transient protection or other performance-critical needs are critical.

The IXFP8N50P3\'s working principle is based on the relationship between electric field and semiconductor material. In a P-channel FET, the gate terminal is positive with respect to the source terminal, and the drain terminal is negative with respect to the source terminal. When the gate voltage is increased, an electric field is created which causes the electric current to flow from the drain to the source. Conversely, when the gate voltage is reduced, the electric current is inhibited from flowing from the drain to the source.

In an N-channel FET, the gate terminal is negative with respect to the source terminal, and the drain terminal is positive with respect to the source terminal. When the gate voltage is increased, an electric field is created which causes the electric current to flow from the source to the drain. Conversely, when the gate voltage is reduced, the electric current is inhibited from flowing from the source to the drain.

In the IXFP8N50P3, a gate-source voltage is applied to control the flow of electric current. When the gate voltage is lower than the threshold voltage, the IXPF8N50P3 is off; when it is above the threshold voltage, the IXFP8N50P3 is on. It works very similar to a switch, with the gate voltage acting as the switch. In addition, the IXFP8N50P3 is designed to be a non-linear device, providing a gain of current with respect to the gate voltage. This allows the IXFP8N50P3 to be driven over a wide range of voltage so it can work in applications where the voltage range is small or the current needs to be controlled.

The IXFP8N50P3 can be used in a wide range of applications that require high current handling and high blocking voltage, such as motor control, high-power switching, audio amplifiers and lighting systems. Its fast switching capabilities make it a good choice for high-speed applications. In addition, the IXFP8N50P3 can also be used for low-power circuits, such as logic circuits, RGB LED drivers and general purpose logic signaling.

The IXFP8N50P3 is an ideal choice for applications requiring quick switching, high current handling and high blocking voltage. Its reliable performance and wide range of applications make it one of the most popular MOSFETs on the market today.

The specific data is subject to PDF, and the above content is for reference

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