Allicdata Part #: | IXFP22N65X2M-ND |
Manufacturer Part#: |
IXFP22N65X2M |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH |
More Detail: | N-Channel 650V 22A (Tc) 37W (Tc) Through Hole TO-2... |
DataSheet: | IXFP22N65X2M Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 1.5mA |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | TO-220 Isolated Tab |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 37W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2190pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 37nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 145 mOhm @ 11A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFP22N65X2M is a state-of-the-art discrete power MOSFET module with a logic-level gate drive which is specifically designed for use in high-current, high-efficiency power conversion applications. It is a very versatile device that can be used in a variety of applications ranging from simple DC to complex DC-to-DC or AC-to-DC conversion. It features advanced power MOSFET technology and comes in a small surface-mount package which enables an efficient use of board real estate.
The IXFP22N65X2M is part of a highly integrated family of discrete power MOSFET modules. It includes N-channel MOSFETs, which allow for very high efficiency power conversion. Its unique structure allows for easy integration into existing system designs. The integrated logic makes it very easy to design the power stage and system control, as well as provide circuitry which enables the module to be current mode controlled.
The power MOSFETs in the IXFP22N65X2M are also internally optimized for improved performance. They are capable of conducting very high currents and can handle peak voltages up to +/-50V. The low on-state resistance of the device reduces power losses, allowing for high efficiency. Furthermore, the structure of the device has been optimized to reduce EMI noise, which is a common problem in high-end power applications.
The IXFP22N65X2M features a logic-level gate drive which enables the device to be used in both high and low current applications. The logic gate drive has been designed to be capable of driving up to +/-36V. This versatility makes the IXFP22N65X2M an ideal choice for applications ranging from high-current switch-mode power supplies to low-Current low-dropout (LDO) regulators.
The IXFP22N65X2M is controlled by an internal control logic circuit. This circuit is designed to enable the device to be operated in either Voltage-Mode or Current-Mode control. Voltage-Mode control allows the device to be operated in either the buck or the boost mode, while Current-Mode control enables the device to be operated in either the forward or the reverse mode. This makes the IXFP22N65X2M an extremely versatile device that can be used in a variety of circuit designs.
The IXFP22N65X2M is an excellent choice for a wide range of high-efficiency power conversion applications. Its small size and integrated logic enable designers to make the most efficient use of board space and reduce development time. Its low on-state resistance and logic-level gate drive make it suitable for both high-current and low-current applications, making it an ideal choice for power supply designs. Finally, its integrated control logic allows for easy implementation of both voltage and current modes, making the IXFP22N65X2M an essential component for any power conversion application.
The specific data is subject to PDF, and the above content is for reference
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