Allicdata Part #: | IXFP4N100P-ND |
Manufacturer Part#: |
IXFP4N100P |
Price: | $ 1.81 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1000V 4A TO-220 |
More Detail: | N-Channel 1000V 4A (Tc) 150W (Tc) Through Hole TO-... |
DataSheet: | IXFP4N100P Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 1.63019 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1456pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
Series: | HiPerFET™, PolarP2™ |
Rds On (Max) @ Id, Vgs: | 3.3 Ohm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXFP4N100P Application Field and Working Principle
IXFP4N100P is a single N-channel MOSFET transistor with low power dissipation, high breakdown voltages and low on-resistance. It is suitable for switching and linear applications, primarily during low current and voltage conditions. It is constructed with extremely thin silicon technology and has been designed with insulated metallic source and drain electrodes.
Application Field
The IXFP4N100P is primarily used in general-purpose and low voltage applications such as:
- Low-side switching in DC-DC converters
- Low voltage inverters
- Battery operated systems
- Battery powered circuits
- Resonance circuits
- Primary side switching in AC/DC converters
- Secondary side switching in AC/DC converters
- Signal conditioning systems
- Signal amplification
Working Principle
The working principle of the IXFP4N100P is based on the field effect transistor principle. Field effect transistors have source, gate, and drain terminals. By applying a voltage at the gate, the conductivity of the channel between the source and the drain is changed. This allows current to flow through the channel and provides a signal amplification.The IXFP4N100P is a N-channel device, meaning it has negative (N) type transistor. In N-channel MOSFETs, the gate is the only active terminal and the gate voltage is used to control the conductivity of the channel. When a negative gate voltage is applied to the device, it will open and pass current.The IXFP4N100P also features a low threshold voltage which allows it to be used for low voltage applications, such as battery operated systems. The device\'s high breakdown voltage also ensures its reliability and safety.
Conclusion
The IXFP4N100P is an ideal single N-channel MOSFET transistor for low current and low voltage applications such as, DC-DC converters, inverters, battery operated systems, signal conditioning systems and signal amplification. It is constructed with extremely thin silicon technology and has a low threshold voltage and a high breakdown voltage. These features ensure the reliability and safety of the device.
The specific data is subject to PDF, and the above content is for reference
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