
Allicdata Part #: | IXFP8N85XM-ND |
Manufacturer Part#: |
IXFP8N85XM |
Price: | $ 1.61 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH |
More Detail: | N-Channel 850V 8A (Tc) 33W (Tc) Through Hole TO-22... |
DataSheet: | ![]() |
Quantity: | 1000 |
50 +: | $ 1.44900 |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Package / Case: | TO-220-3 Full Pack, Isolated Tab |
Supplier Device Package: | TO-220 Isolated Tab |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 33W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 654pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 850 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 850V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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As electronic components and technology evolve, so does the way we use it. The IXFP8N85XM is a power MOSFET from IXYS Corporation, and its capabilities have widespread applications in the industry. This article will provide a brief overview of IXFP8N85XM\'s application field and working principle.
The IXFP8N85XM is a type of gate-charge FET (GFT) transistor. It is a single-power MOSFET, which means it is made up of one MOSFET, allowing it to be used in a variety of applications. The device has a voltage rating of +-55V and a resistance of 8 ohms, so it is capable of handling high current. Additionally, it has a low gate-source capacitance, which helps optimize its performance.
The IXFP8N85XM is mainly used in automotive, industrial and medical equipment. In automotive applications, it can be used to regulate power for battery charging, ABS and lighting systems. In industrial applications, it can be used for controlling power for motors, pumps and other equipment. In medical applications, it is used for providing power for medical imaging and diagnostic equipment. The device\'s high switching speed, low on-resistance and wide operating temperature range make it perfect for use in these applications.
The IXFP8N85XM works using the principles of metal-oxide-semiconductor field effect transistor (MOSFET). It consists of a metal-oxide gate and a source-drain region. When a voltage is applied to the gate, it creates a channel between the source and drain, which allows current to pass through. The device has an off-state voltage of +-55V, which means that once the voltage is applied, it will remain in the “on” state until it is reversed.
In conclusion, the IXFP8N85XM is an ideal solution for a variety of applications in the automotive, industrial and medical industries. Its wide range of features, such as low gate-source capacitance and high switching speed, make it a versatile solution for any application. Additionally, its operation is based on the principles of MOSFET transistors, which make it reliable and efficient.
The specific data is subject to PDF, and the above content is for reference
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