Allicdata Part #: | IXFX26N60Q-ND |
Manufacturer Part#: |
IXFX26N60Q |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 600V 26A PLUS 247 |
More Detail: | N-Channel 600V 26A (Tc) 360W (Tc) Through Hole PLU... |
DataSheet: | IXFX26N60Q Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HiPerFET™ |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 26A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 250 mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: | 200nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 5100pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 360W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PLUS247™-3 |
Package / Case: | TO-247-3 |
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IXFX26N60Q is an excellent component series that can be used in many applications. This component is a Field Effect Transistor (FET) specifically a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) of the single type. The IXFX26N60Q is a 600 V drain-source voltage component that has excellent current capacity abilities, performing well with up to a 26 A load. The component also offers excellent high frequency performance, switching fast in the kHz range and having a low commutation time. Additional features that the IXFX26N60Q has to offer include a low switching loss for higher efficiency, an integrated temperature sensor for monitoring, and Avalanche existing for overload protection.
Given the features these components have, there is a wide range of applications that they can be used for. Some of the most common applications include power electronics systems, power supplies, motor drives, inverters, and converters. With the thermal protection and Avalanche protection, the IXFX26N60Q can be used in high power applications that require long-term high current operation and be reliable. Its high frequency performance has made it great for a range of switch mode power supply applications, such as those found in home appliances or industrial systems.
The working principle of the IXFX26N60Q is that of a MOSFET. It works by using an electric gate to alter the flow of electricity between the drain and the source. The MOSFET requires a certain minimum amount of voltage to be applied to the gate in order to open the channel, allowing current to flow from source to drain. The higher the voltage applied to the gate, the higher the flow of current will be. The behavior of the MOSFET can be fully controlled by the voltage applied to the gate, either through independent gate controls or by using other components such as a voltage regulator.
In conclusion, the IXFX26N60Q is an excellent series of FETs that can be used in a variety of applications due to its high current capacity, high frequency performance, and its long-term reliable operation. Its application range is wide, making it a great choice for many industrial or consumer applications. In operation, it utilizes a MOSFET working principle which can be easily controlled with the voltage applied to the gate, allowing for varied on-off times and current capacities.
The specific data is subject to PDF, and the above content is for reference
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