Allicdata Part #: | IXFX38N80Q2-ND |
Manufacturer Part#: |
IXFX38N80Q2 |
Price: | $ 19.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 800V 38A PLUS247 |
More Detail: | N-Channel 800V 38A (Tc) 735W (Tc) Through Hole PLU... |
DataSheet: | IXFX38N80Q2 Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 17.30460 |
Series: | HiPerFET™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800V |
Current - Continuous Drain (Id) @ 25°C: | 38A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 220 mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs: | 190nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 8340pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 735W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PLUS247™-3 |
Package / Case: | TO-247-3 |
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The IXFX38N80Q2 is part of a large family of high-performance insulated gate field-effect metal-oxide semiconductor field-effect transistors (IGFETs), or, more specifically, MOSFETs. The IXFX38N80Q2 is a single high-voltage MOSFET, offering improved performance in a variety of applications across multiple industries.
The remarkable performance of the IXFX38N80Q2 comes from its robust design and range of features. Thanks to its low on-resistance, the transistor can handle loads of up to 80V with minimal power loss. It is also capable of carrying current at up to 8A, making it suitable for high-power applications. The device also features a fast switching speed of 70nsec and is capable of operating at frequencies up to 1 kHz.
The IXFX38N80Q2 is suitable for a wide range of applications. It is most commonly used as a switch in consumer electronics, such as TVs and sound bars, as well as in industrial and automotive applications, in particular for power supplies, general load switching, and motor control. In addition, the IXFX38N80Q2 can be used in a variety of other applications, including lighting, mobile device charging, and solar inverters.
The IXFX38N80Q2 works on the principle of the Gate Effect. In short, the device works by allowing a change in conductivity between the source and drain by means of a control gate to regulate the current. In a typical application, the voltage applied to the gate is changed to control the flow of current between the source and drain. When a positive voltage is applied to the control gate, more current will flow, while a negative voltage will decrease the current.
This flexibility makes the IXFX38N80Q2 a powerful and versatile device. Thanks to its impressive specifications, the transistor is suitable for a wide range of applications, from consumer electronics and lighting to industrial and solar. Its industrial-grade design and fast switching speed are also well-suited for high-power applications.
The IXFX38N80Q2 is an example of the ever-growing range of MOSFETs available in the market today. Thanks to its range of features, the transistor is well-suited for a wide range of applications, from consumer electronics and industrial to automotive and solar. By offering improved performance when compared to other high-voltage MOSFETs, the IXFX38N80Q2 is a reliable and versatile option for any MOSFET application.
The specific data is subject to PDF, and the above content is for reference
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