IXFX50N50 Allicdata Electronics
Allicdata Part #:

IXFX50N50-ND

Manufacturer Part#:

IXFX50N50

Price: $ 14.76
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 500V 50A PLUS247
More Detail: N-Channel 500V 50A (Tc) 520W (Tc) Through Hole PLU...
DataSheet: IXFX50N50 datasheetIXFX50N50 Datasheet/PDF
Quantity: 1000
30 +: $ 13.41270
Stock 1000Can Ship Immediately
$ 14.76
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Package / Case: TO-247-3
Supplier Device Package: PLUS247™-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 520W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 100 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFX50N50 is a MOSFET (Metal Oxide Field Effect Transistor) device that is used in a variety of applications, ranging from low voltage switching, to motors, to electrical protection devices. It belongs to the Single FET family, and is designed specifically for use with high switching frequency applications. Its wide operating temperature range makes it suitable for a wide range of applications.

The MOSFET is comprised of an insulated gate, an insulator, and a metal oxide. These components interact with each other to create an electric field that creates a barrier between the metal oxide and the insulator. The electric field is created when current passes through the device. This electric field allows the device to switch between the two states of conducting (ON) and non-conducting (OFF).

The IXFX50N50 features a low on-resistance of 6.2 ohms and a high maximum drain-source voltage rating of 50 volts. This makes the MOSFET especially effective for low voltage applications. Additionally, the device offers good noise immunity, making it suitable for use with noise-sensitive applications. Furthermore, the IXFX50N50 can handle higher voltage surges with ease, making it an ideal choice for applications that require it.

The IXFX50N50 is a great device for applications that require high switching frequency, as it can handle frequencies of up to 150 MHz without any significant power loss. This high frequency range allows the device to be used in applications where faster switching is required. Furthermore, its low on-resistance makes the IXFX50N50 perfect for low voltage switching applications, where high efficiency and low heat dissipation are critical.

The IXFX50N50 is also uniquely suited for protection applications, as its low on-resistance allows it to quickly cut off any excessive voltage or current that may occur in a circuit. This makes it especially suitable for use in circuits that may be subject to accidental short-circuiting or other high current or voltage conditions. Furthermore, the device is also capable of handling high voltage surges, making it ideal for use in applications where protection against high-power surges is required.

Overall, the IXFX50N50 is an excellent choice for a variety of applications, offering high performance and reliability. Its low on-resistance, high maximum drain-source voltage rating, and good noise immunity make it particularly suitable for low voltage switching, noise sensitive applications, and protection applications. Additionally, its high switching frequency range makes it perfect for applications that require faster switching speed. With these features in mind, the IXFX50N50 is certainly a device worth considering when selecting a MOSFET.

The specific data is subject to PDF, and the above content is for reference

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