IXFX74N50P2

Vgs(th) (Max) @ Id:	5V @ 4mA
Package / Case:	TO-247-3
Supplier Device Package:	PLUS247™-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1400W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	9900pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	165nC @ 10V
Series:	HiPerFET™, PolarHV™
Rds On (Max) @ Id, Vgs:	77 mOhm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	74A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction to IXFX74N50P2 FET

The IXFX74N50P2 FET is a high-power field-effect transistor that has a wide range of applications. It is an excellent choice for load switching, motor control, and other applications where high-power dissipation is needed. The IXFX74N50P2 FET is a single-mode MOSFET with a P-type semiconductor material and a 600V breakdown voltage. It has a maximum current rating of 50A and a maximum on-state voltage drop of 7V at 25A.

Features of IXFX74N50P2 FET

The IXFX74N50P2 FET is a high-power field-effect transistor that offers excellent performance in applications where high-power dissipation is needed. Its features include:• High-power dissipation• Low on-state voltage drop at 25A• 600V breakdown voltage• 50A maximum current rating• Low gate capacitance• Low thermal resistivity

Application Field and Working Principle of IXFX74N50P2 FET

The IXFX74N50P2 FET is suitable for a wide range of applications, such as motor control, load switching, power management, and high-power device switching. The working principle of this FET is based on the principle of charge control. When an input voltage is applied to its gate terminal, the FET produces a small electric field that affects the charge distribution of the P-type semiconductor material. This electric field controls the flow of current from the source to the drain by varying the resistance of the FET between the two terminals.The IXFX74N50P2 is particularly suitable for wide-range switching applications, due to its low on-state voltage drop and high maximum current rating. It is also suitable for applications with high power dissipation, as it has a low gate capacitance, which allows for low energy losses.

Conclusion

The IXFX74N50P2 FET is a high-power field-effect transistor that offers excellent performance in applications where high-power dissipation is needed. Its features include a low on-state voltage drop and high maximum current rating, making it suitable for a wide range of applications. The working principle of this FET is based on the principle of charge control, which allows for low energy losses and wide-range switching applications.

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