Allicdata Part #: | IXFX52N30Q-ND |
Manufacturer Part#: |
IXFX52N30Q |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 300V 52A PLUS247-3 |
More Detail: | N-Channel 300V 52A (Tc) 360W (Tc) Through Hole PLU... |
DataSheet: | IXFX52N30Q Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | HiPerFET™ |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 300V |
Current - Continuous Drain (Id) @ 25°C: | 52A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Vgs (Max): | -- |
FET Feature: | -- |
Power Dissipation (Max): | 360W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PLUS247™-3 |
Package / Case: | TO-247-3 |
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IXFX52N30Q is a power field-effect transistor (FET) most commonly used in switching applications. It is designed to reduce power losses with wide operating voltage and high-speed switching. The IXFX52N30Q has improved avalanche energy performance and reduced switching time.
The IXFX52N30Q is a N-channel Enhancement mode FET that is characterized for continuous drain current (ID) of 7A and a drain-source voltage (VDS) of 30V. It can displace up to 10A of peak pulse current with a maximum power dissipation (PD) of 37.5W. The device features low-threshold voltage (VGS) of 2.6V and maximum transconductance (gm) of 5.5S.
The IXFX52N30Q is a single-element FET device that is composed of four major elements: gate (G) , source (S) , drain (D) and substrate (B) . The gate is the controlling section of the MOSFET, and to turn on the MOSFET, a voltage needs to be applied to the Gate. This voltage separates the charge carriers in the MOS Channel creating a conductive path between the Source and the Drain of the MOSFET. At this point, current begins to flow from the Source to the Drain.
The IXFX52N30Q works as a low on-resistance switch. The device is considered to be a saturated type device because it operates near cut-off. Therefore, when in operation, the IXFX52N30Q exhibits low on-resistance and low gate-charge. The switching time of the IXFX52N30Q is short and has a fast reverse recovery time. These characteristics make the device an ideal choice for high-speed switching applications.
In terms of application field, the IXFX52N30Q is well suited for any high-speed switching circuit. This device is especially popular in motor control, power supply systems and power amplification. Its high-speed switching capabilities make it a reliable choice for various applications.
Overall, the IXFX52N30Q is an ideal choice for high-speed switching applications due to its low on-resistance and gate-charge, its short switching time, and its fast reverse recovery time. It is also well suited for a variety of applications such as motor control, power supply systems, and power amplification.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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IXFX44N80Q3 | IXYS | 19.83 $ | 1000 | MOSFET N-CH 800V 44A PLUS... |
IXFX30N100Q2 | IXYS | 23.0 $ | 1000 | MOSFET N-CH 1000V 30A PLU... |
IXFX15N100 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1KV 15A PLUS2... |
IXFX14N100 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 1000V 14A PLU... |
IXFX30N50Q | IXYS | 0.0 $ | 1000 | MOSFET N-CH 500V 30A PLUS... |
IXFX32N50 | IXYS | -- | 1000 | MOSFET N-CH 500V 32A PLUS... |
IXFX32N50Q | IXYS | -- | 1000 | MOSFET N-CH 500V 32A PLUS... |
IXFX210N17T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 170V 210A PLU... |
IXFX260N17T | IXYS | 0.0 $ | 1000 | MOSFET N-CH 170V 260A PLU... |
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