IXFX52N30Q Allicdata Electronics
Allicdata Part #:

IXFX52N30Q-ND

Manufacturer Part#:

IXFX52N30Q

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 300V 52A PLUS247-3
More Detail: N-Channel 300V 52A (Tc) 360W (Tc) Through Hole PLU...
DataSheet: IXFX52N30Q datasheetIXFX52N30Q Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: HiPerFET™
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On): --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
Vgs (Max): --
FET Feature: --
Power Dissipation (Max): 360W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PLUS247™-3
Package / Case: TO-247-3
Description

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IXFX52N30Q is a power field-effect transistor (FET) most commonly used in switching applications. It is designed to reduce power losses with wide operating voltage and high-speed switching. The IXFX52N30Q has improved avalanche energy performance and reduced switching time.

The IXFX52N30Q is a N-channel Enhancement mode FET that is characterized for continuous drain current (ID) of 7A and a drain-source voltage (VDS) of 30V. It can displace up to 10A of peak pulse current with a maximum power dissipation (PD) of 37.5W. The device features low-threshold voltage (VGS) of 2.6V and maximum transconductance (gm) of 5.5S.

The IXFX52N30Q is a single-element FET device that is composed of four major elements: gate (G) , source (S) , drain (D) and substrate (B) . The gate is the controlling section of the MOSFET, and to turn on the MOSFET, a voltage needs to be applied to the Gate. This voltage separates the charge carriers in the MOS Channel creating a conductive path between the Source and the Drain of the MOSFET. At this point, current begins to flow from the Source to the Drain.

The IXFX52N30Q works as a low on-resistance switch. The device is considered to be a saturated type device because it operates near cut-off. Therefore, when in operation, the IXFX52N30Q exhibits low on-resistance and low gate-charge. The switching time of the IXFX52N30Q is short and has a fast reverse recovery time. These characteristics make the device an ideal choice for high-speed switching applications.

In terms of application field, the IXFX52N30Q is well suited for any high-speed switching circuit. This device is especially popular in motor control, power supply systems and power amplification. Its high-speed switching capabilities make it a reliable choice for various applications.

Overall, the IXFX52N30Q is an ideal choice for high-speed switching applications due to its low on-resistance and gate-charge, its short switching time, and its fast reverse recovery time. It is also well suited for a variety of applications such as motor control, power supply systems, and power amplification.

The specific data is subject to PDF, and the above content is for reference

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