IXFX21N100Q

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The IXFX21N100Q is a field-effect transistor (FET), or insulated-gate field-effect transistor (IGFET) specifically, an N-channel enhancement-mode type MOSFET with an extremely low on-resistance. This makes it an ideal choice for power applications requiring high-frequency switching and low-loss conduction.

The IXFX21N100Q was first introduced in the late 1990s by IXYS Corporation. It has become an industry standard for low-loss power switching in smaller, more compact systems. In addition to its low on-resistance and driver friendly gate-drive characteristics, the IXFX21N100Q has a high dielectric strength, making it able to handle higher voltages. It is also capable of temperatures up to 175°C.

The IXFX21N100Q is an extremely versatile device and can be used in a wide range of applications, from high-end switching power supplies to low-power logic circuits, and from DC-DC converters to general purpose switching circuits. It is especially suited for RF applications where high-speed switching, low-loss conduction, and constant current are crucial.

The main application fields for the IXFX21N100Q include telecom infrastructure equipment, motor and lighting control, automation equipment, automotive electronics, and renewable energy systems. It is also suitable for high-end industrial and hi-fi applications where higher power levels, higher switching speeds, and low-loss conduction are necessary.

The working principle of the IXFX21N100Q is fairly straightforward. It is an enhancement-mode MOSFET, which means it requires a gate voltage Vgs in order to achieve on-state conduction. With the gate voltage applied and the channel open, the channel between the source and drain terminals is filled with charge, creating an electric field. This field then creates an electric field between the gate and the source terminals, which controls the current through the channel between the source and drain.

The channel width and length of the IXFX21N100Q are both optimized for extremely low on-resistance. The device also has a high breakdown voltage, allowing it to handle high load currents. Since it is an enhancement-mode device, the gate voltage must be taken into consideration when selecting a driver to control the IXFX21N100Q. When selecting a driver, the voltage rating should be at least 0.75 V higher than the IXFX21N100Q’s on-state voltage.

In conclusion, the IXFX21N100Q is a versatile, low-loss, low-resistance device capable of handling very high levels of power. Its field-effect transistor (FET) construction ensures it is capable of high-frequency switching, making it ideal for RF applications where high speed switching and low-loss conduction are required. Its wide range of applications make it suitable for a variety of applications from telecom infrastructure equipment to general purpose switching circuits.

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