IXFX160N30T

Vgs(th) (Max) @ Id:	5V @ 8mA
Package / Case:	TO-247-3
Supplier Device Package:	PLUS247™-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1390W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	28000pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	335nC @ 10V
Series:	GigaMOS™
Rds On (Max) @ Id, Vgs:	19 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	160A (Tc)
Drain to Source Voltage (Vdss):	300V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IXFX160N30T Application Field and Working Principle of Transistors - FETs, MOSFETs - Single

The IXFX160N30T is a high power field effect transistor (FETs) designed to drive a range of AC and DC loads in a variety of applications. It is a single MOSFET (Metal Oxide Semiconductor Field Effect Transistor) capable of switching currents up to 160A with a peak output voltage of 30V. Its compact design allows it to fit in limited space and it operates at zero voltage switching (ZVS). It is frequently used in high power AC and DC converters, motor drives, inverters, converters and power supplies.The IXFX160N30T has a number of advantages over standard FETs. It has low on-resistance, which allows for efficient operation under high load conditions. It has very low gate charge Qg, which helps to reduce switching losses. Furthermore, it has low Rds(on) and low gate-body capacitance, making it faster and more reliable than other MOSFETs. Additionally, its high current gain makes it suitable for applications that require a high degree of accuracy and accuracy.The IXFX160N30T works by utilizing a MOS barrier gate. This barrier is made up of two elements, a gate and a drain. When a voltage is applied to the gate, electrons can pass through it, creating a conduction channel between the drain and the source of the transistor. This channel allows for current to flow from the source to the drain. This process enables the IXFX160N30T to switch on and off quickly and efficiently.In addition to its high power capabilities, the IXFX160N30T also has several other advantages. For example, it is resistant to back-bias voltage, meaning that it is capable of continuing to operate even when exposed to high power transients. Additionally, its high peak output voltage allows it to control large voltage swings without excessive current consumption. Finally, the IXFX160N30T has a very low on-resistance, meaning that it can handle large currents more effectively.The IXFX160N30T can be used in a variety of different applications including motor drive, solar inverters, converters, power supplies and high power AC and DC converters. As a result, it is a versatile device that can be used to drive a variety of high power loads. Furthermore, its compact size allows it to be placed in limited spaces. As a result, it is a popular choice for many applications.The IXFX160N30T offers a number of advantages and is an ideal choice for many applications. Its high power, low on-resistance, low gate charge Qg, low Rds(on) and low gate-body capacitance, high power stability and high voltage capability make it an attractive choice for a variety of different applications. Additionally, its compact size makes it suitable for use in limited spaces, making it an ideal choice for many applications. Finally, its high current gain and low gate charge Qg help to reduce switching losses and make it more reliable than other similar FETs.

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