IXFX120N30T Allicdata Electronics
Allicdata Part #:

IXFX120N30T-ND

Manufacturer Part#:

IXFX120N30T

Price: $ 9.13
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 300V 120A PLUS247
More Detail: N-Channel 300V 120A (Tc) 960W (Tc) Through Hole PL...
DataSheet: IXFX120N30T datasheetIXFX120N30T Datasheet/PDF
Quantity: 30
1 +: $ 8.29710
30 +: $ 6.80230
120 +: $ 6.13867
510 +: $ 5.14322
Stock 30Can Ship Immediately
$ 9.13
Specifications
Vgs(th) (Max) @ Id: 5V @ 4mA
Package / Case: TO-247-3
Supplier Device Package: PLUS247™-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 960W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 265nC @ 10V
Series: GigaMOS™
Rds On (Max) @ Id, Vgs: 24 mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 300V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFX120N30T is an enhancement-mode Vertical Field Effect Transistor (FET) that operates from -55˚C to +150˚C Ambient Temperature. This type of transistor is known as an N-Channel MOSFET or NMOSFET and works in a very similar way to a JFET. It normally has three pins, three leads and is provided in a TO-220 package. The IXFX120N30T is a power MOSFET that is used in a wide variety of applications and is suitable for high current and voltage capabilities.

The MOSFET is manufactured using a vertical conductive layer (source) surrounded by an insulating dielectric material (the gate) that produces an electric field. This electric field helps to control the current flow between the source and the drain pins. The source pin is usually the positive terminal, and the MOSFET is usually connected between the positive voltage supply and the load. When the voltage at the gate is greater than at the source, the device operates as an N-Channel FET and current can flow from the source to the drain.

The IXFX120N30T is designed for switching low voltage and high current applications. It has a very low on-state resistance (RDS) of 0.12 ohm, making it suitable for pushing very large currents. It is able to handle up to 120 volts and up to 30 amperes of maximum current at a maximum power dissipation of 36 watts. The maximum drain-source breakdown voltage is ± 250 V, and the maximum gate-source voltage is ± 30V.

This power MOSFET can be used in various applications such as motor control, circuit protection, power supply, lighting control, solenoid control, and any other application requiring high current driving capability. It is also often used in power amplifiers and power supplies, RF power amplifiers, motor control, automotive motor control, and medical equipment. The device is available with Pb-free (RoHS Compliant) product and it features low RDS(on), improved robustness and fast switching speed.

In summary, the IXFX120N30T is a vertical N-Channel Power MOSFET that is suitable for high current and voltage capability. It is designed for switching low voltage and high current applications and is useful in various applications including motor control, circuit protection, power supply, lighting control, solenoid control, and any other application requiring high current driving capability. The maximum voltage and current handling capabilities are 120 volts and 30 amperes respectively. The device is able to provide a power dissipation of 36 watts, and it is available with Pb-free (RoHS Compliant) product.

The specific data is subject to PDF, and the above content is for reference

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