Allicdata Part #: | IXFX120N25P-ND |
Manufacturer Part#: |
IXFX120N25P |
Price: | $ 7.81 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 250V 120A PLUS247 |
More Detail: | N-Channel 250V 120A (Tc) 700W (Tc) Through Hole PL... |
DataSheet: | IXFX120N25P Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 7.02324 |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 8000pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 700W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PLUS247™-3 |
Package / Case: | TO-247-3 |
Series: | PolarHT™ HiPerFET™ |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 250V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: | 185nC @ 10V |
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IXFX120N25P is one of the most common and recognizable transistor types of Field Effect Transistors (FETs). It is a type of silicon controlled rectifier (SCR), which gets its name from the fact that it has no physical connections inside the package, but instead uses fields of electric charge to control the flow of current between its sources and drains. This makes it ideal for applications that require very low power consumption, as well as high efficiency and reliability.
The IXFX120N25P is a single n-channel enhancement-mode FET. It is designed to be very efficient in terms of power consumption and its gate-source voltage threshold is -3V, meaning that the FET can be switched on with only slight changes in gate-source voltage.
The IXFX120N25P is primarily used in circuit designs that require substantial current when operational. It is typically used to switch high voltages and currents, such as in switching power supplies, ballast lighting circuits, audio amplifiers and industrial automation systems.
The working principle of the IXFX120N25P is that when the gate-source voltage is low, the transistor is turned off. This is achieved by allowing electrons to flow through the FET between the source and the drain, thereby carrying current between the two. When the gate-source voltage is increased, however, electric fields within the FET will repel electrons from the surface of the FET and so prevent any current from flowing. This then turns the transistor off, limiting the current flow between the source and the drain.
There are a variety of other applications for the IXFX120N25P, such as in power management and high-frequency communications. It is also commonly used in solar panels, where it is used in conjunction with a bypass diode to prevent reverse flow of current through the panel.
In conclusion, the IXFX120N25P is an extremely versatile transistor, due to its unique configuration and design. Its low power consumption, high efficiency and reliability make it an ideal choice for a variety of applications. Its gate-source voltage threshold of -3V gives it the flexibility to be controlled with only small changes in gate-source voltage, making it extremely useful in situations where precise low-power control is required.
The specific data is subject to PDF, and the above content is for reference
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