Allicdata Part #: | IXFX360N10T-ND |
Manufacturer Part#: |
IXFX360N10T |
Price: | $ 6.97 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 100V 360A PLUS247 |
More Detail: | N-Channel 100V 360A (Tc) 1250W (Tc) Through Hole P... |
DataSheet: | IXFX360N10T Datasheet/PDF |
Quantity: | 1000 |
30 +: | $ 6.26766 |
Vgs(th) (Max) @ Id: | 5V @ 3mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | PLUS247™-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 33000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 525nC @ 10V |
Series: | GigaMOS™ HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 2.9 mOhm @ 100A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 360A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IXFX360N10T is a type of field effect transistor (FET). FETs are electronic semiconductor devices which use an electric field to control the electrical current. The IXFX360N10T is a type of metal-oxide-semiconductor FET (MOSFET). MOSFETs are a type of FETs which use a metal-oxide layer as the gate instead of a straight electric field. The IXFX360N10T is a single MOSFET, which means it contains only one MOSFET element with one gate.
The IXFX360N10T is used in a variety of applications, ranging from amplifiers and switching circuits to power management components. It is often used in audio amplifiers and power converters, as its ability to handle higher frequency signals makes it suitable for those applications. It is also used in power supplies and switching circuits, as its low on-resistance allows for increased efficiency. Additionally, the IXFX360N10T can be used in high-temperature and automotive applications because of its wide temperature range.
The IXFX360N10T operates by using an electric field to control the flow of current. The device consists of two terminals: the source and the drain. A voltage is applied across the source and the drain, and a gate voltage is applied to the gate. The gate voltage creates an electric field, which in turn controls the current flow from the source to the drain. The amount of current that can flow through the device is dependent on the strength of the electric field, which is why the gate voltage is an important factor in determining the device’s performance.
The IXFX360N10T has a number of features that make it suitable for a variety of applications. It is rated for a drain-to-source voltage of 10V, which is relatively high compared to other FETs. Additionally, the device’s low on-resistance (RDS(on)) of 11mΩ makes it more efficient than many other FETs. The device is also rated for a maximum drain-source current of 360A, which is enough for many high-power applications.
In conclusion, the IXFX360N10T is a single MOSFET which is suitable for a variety of applications. Its high 10V rating and low on-resistance make it suitable for audio amplifiers and power converters, while its high drain-source current rating makes it suitable for high-power applications. Its ability to handle high frequency signals makes it suitable for automotive and high-temperature applications. Additionally, its ease of use and low cost make it a popular choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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