IXFX520N075T2 Discrete Semiconductor Products

IXFX520N075T2 is a device in the field of power MOSFETs by IXYS. It is a silicon N-channel MOSFET device. In its application field, the IXFX520N075T2 MOSFET can be found in the power electronic systems, battery chargers, converters, current controllers, inverters, switched mode power supplies (SMPS), solenoids, and electric motors. It can also be used in the light dimming control, waveforms clamping, telecom switching, remote control systems, and several other applications.

Operating at a maximum junction temperature of 150°C, the IXFX520N075T2 offers an on-state drain source resistance of 0.52 Ohm typical at 25° C and a maximum current rating of 79A. It is a unipolar device with a body source voltage and drain source voltage with capabilities up to 75V and 25V, respectively.

MOSFET technology works on the principle of metal-oxide-semiconductor field-effect. It consists of a three-layer sandwich structure. It works on the basis of conducting electrons by making electric current flow through the metal-oxide and semiconductor layers. The surface of the device is made of metal and the material between the metal and semiconductor layers is an oxide. This surface layer is insulated and no current can flow through it. On the other hand, the semiconductor layer is capable of controlling the drift of electrons.

Whenever a voltage is applied on the metal-oxide layer, the electrons drift into the semiconductor material. If a positive voltage is applied, the electrons drift from the source to the drain region forming an inversion layer. This inversion layer will enhance the current flow from source to the drain. The electrons are confined to the semiconductor layer and the flow of electrons will be controlled by the application of voltages across the other two terminals called gate and source terminals.

In the IXFX520N075T2 MOSFET, the drain current is monitored by controlling the voltage on gate-source terminal. With its capability of providing higher current in the lesser area, MOSFET is used as a switching device. It is capable of switching large amount of current in a fraction of a second along with its lower power losses due to lesser resistance and less dissipation of heat. The device helps in providing higher switching frequencies in combination with isolated gate drivers and controllers. The IXFX520N075T2 is an ideal candidate for usage in automotive application requiring high voltage and current.