IXFX170N20P

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IXFX170N20P Application Field and Working Principle

IXFX170N20P is a Power Field-Effect Transistor (FET) developed and produced by Infineon Technologies, one of the leading suppliers of power semiconductors. It belongs to the category of single, insulated-gate-bipolar transistors (IGBTs) and is used in various types of device power management applications. IXFX170N20P utilizes the latest technology in semiconductor manufacturing and is optimized for use in high performance, power-conversion systems.

IXFX170N20P application fields include solar energy and photovoltaic systems, aerospace and defense, industrial, automotive and power electronic applications. As a solution for device power management, the IXFX170N20P is used to provide efficient and reliable solutions for a wide range of applications, ranging from very low-noise audio amplifier control to high-voltage, high-power applications.

IXFX170N20P Working Principle

The IXFX170N20P operates on a two-stage power switching principle. It is composed of a voltage-controlled insulated-gate bipolar transistor (IGBT) and an internal protection diode. During normal operation, the IGBT conducts current due to gate control. This gate is supplied with gate driving voltage with the help of circuitry inside the module, thus turning the switch on and off. In case of an internal fault, the IGBT and the protection diode will activate and prevent the current from reaching an over-current level.

The IGBT is engineered in a vertical trench-gate structure, which ensures greater robustness and higher voltage and current capabilities. Furthermore, its optimized field-effect transistor (FET) architecture reduces switching losses and increases efficiency. The IXFX170N20P clamps the drain-source voltage when in conduction, thus preventing damage to the MOSFET due to voltage spikes. The combination of these features provides maximum protection from high voltage transients during switching cycles as well as from overcurrent and overheating conditions.

In addition to its reliable power switching capability, the IXFX170N20P also provides an added level of security in terms of ESD protection. The IXFX170N20P is designed with integrated ESD protection that meets the requirements of the EN61000-4-2 standard.

Conclusion

The IXFX170N20P is a very efficient and reliable Power FET designed to provide solutions for a wide range of device power management applications. It is engineered in a vertical trench-gate structure, which ensures greater robustness and higher voltage and current capabilities. Furthermore, its optimized FET architecture reduces switching losses and increases efficiency. The IXFX170N20P also provides an added level of security in terms of ESD protection. This make the IXFX170N20P an ideal solution for a wide range of device power management applications.

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