IXFX140N25T

Input Capacitance (Ciss) (Max) @ Vds:	19000pF @ 25V
FET Feature:	--
Power Dissipation (Max):	960W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PLUS247™-3
Package / Case:	TO-247-3
Series:	GigaMOS™
Packaging:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	250V
Current - Continuous Drain (Id) @ 25°C:	140A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	17 mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:	5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs:	255nC @ 10V
Vgs (Max):	±20V

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The IXFX140N25T is a field-effect transistor specifically designed for use in industrial and home automation products. It is a single-in-package enhancement mode MOSFET, developed to replace an existing discrete FET circuit. In order to maximize on-resistance, drain-source breakdown voltage, and gate threshold voltage, the IXFX140N25T uses trench MOS technology. This allows this FET to operate at higher voltages, current ratings and frequencies than competitive FETs, which leads to greater design flexibility and shorter development cycles.The IXFX140N25T application field consists of industrial and home automation products, computers, and telecommunication systems. It has been designed for use in switch-mode power supplies, motor drives, and charging control, as well as high-voltage/low-current switching in industrial, automotive and aerospace products.The IXFX140N25T working principle is based on that of a regular MOSFET. FET stands for field-effect transistor, and this type of transistor works using an electric field rather than current. A field-effect transistor is a three-terminal device, consisting of the source, gate, and drain. The source is charged (positive or negative depending on the type of FET) and the drain is uncharged. When a voltage is applied to the gate, it attracts or repulses electrons from reaching the drain, depending on the gate voltage. This creates a channel between the drain and the source that current can flow through.When a voltage is applied to the gate, it creates an electric field inside the MOSFET that attracts or repulses electrons from reaching the drain. This field affects the current flow through the FET, allowing it to act as an amplifier or a switch for the current.The IXFX140N25T has a drain-source breakdown voltage of 140V with a maximum drain-source voltage of 180V, a gate-source threshold voltage of -2.5V, and a maximum drain-current of 25mA. It has a low on-resistance rating of 25 mohm at 10 V, allowing it to function as a switch with minimal energy loss. The IXFX140N25T is a popular FET for home and industrial automation applications due to its wide range of features and its compact size.The IXFX140N25T is created in a special process known as trench MOS technology, which makes possible the device’s ability to operate at higher voltages and current ratings compared to traditional FETs. It also allows for higher frequencies and briefer development cycles. The IXFX140N25T excels in power efficiency with a low on-resistance rating, and allows for increased design flexibility due to its wide range of features. With these advantages, the IXFX140N25T has become a popular choice for a variety of industrial and home automation applications.

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