
Allicdata Part #: | IXFX420N10T-ND |
Manufacturer Part#: |
IXFX420N10T |
Price: | $ 9.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 100V 420A PLUS247 |
More Detail: | N-Channel 100V 420A (Tc) 1670W (Tc) Through Hole P... |
DataSheet: | ![]() |
Quantity: | 1000 |
30 +: | $ 8.49765 |
Vgs(th) (Max) @ Id: | 5V @ 8mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | PLUS247™-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1670W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 47000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 670nC @ 10V |
Series: | GigaMOS™ HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 2.6 mOhm @ 60A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 420A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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IXFX420N10T is a kind of N-channel MOSFET designed to be used in audio, power, logic level applications and etc. It incorporates a fast internal gate-source ESD (ESD) protection and features very low on-resistance. The high-speed switching capabilities of IXFX420N10T makes it an ideal choice for high-frequency applications.IXFX420N10T Application FieldIXFX420N10T can be used in many different fields. In audio applications, IXFX420N10T is used for audio amplifiers, head phones and other digital audio systems. In power system, IXFX420N10T is used for power source switching and power source controlling systems. In logic level applications, IXFX420N10T can be used to drive power switches and programmable logic controllers (PLC).IXFX420N10T Working PrincipleMOSFET (Metal–oxide–semiconductor Field-effect Transistor) is a kind of three-layer semiconductor integrated device. It consists of three main terminals - drain, gate and source. When a voltage is applied between the gate and source terminals, the current which flows through the device is controlled by the voltage applied between the gate and source terminals. The drain and source terminals are used to control the current flow. The characteristic of the MOSFET structure is its high speed switching capability and low on resistance which makes it an ideal choice for operating in high-frequency circuits.When IXFX420N10T is used in applications, it is important to pay attention to the gate voltage and the drain current. The gate voltage must not exceed the specification of the device or else the device may be damaged. And the drain current must also be limited to avoid overloading the device.IXFX420N10T is also available in different packages. The device can be packaged in either the through-hole TO-252 (D-Pak) package or the surface mount SO-8 package. Depending on the application requirement, the suitable package of IXFX420N10T should be selected.To summarize, IXFX420N10T is a N-channel MOSFET designed to be used in audio, power and logic level applications and etc. IXFX420N10T has fast switching capability and low on resistance and is available in different packages. When IXFX420N10T is used, it is important to pay attention to the gate voltage and the drain current to avoid damaging the device.
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